s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX956 ZTX956 HIGH CURRENT TRANSISTOR ISSUE 3 JUNE 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 2 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 5 Amps peak current Base-Emitter V -770 -900 mV IC=-2A, V =-5V* BE(on) CE * Very low saturation voltage Turn-On Voltage * Excellent gain characteristics up to 2 Amps Static Forward h 100 200 I =-10mA, V =-5V* FE C CE * Spice model available C Current Transfer Ratio 100 200 300 I =-1A, V =-5V* C CE B E 50 150 I =-2A, V =-5V* C CE 10 I =-5A, V =-5V* C CE E-Line TO92 Compatible Transition Frequency f 110 MHz I =-100mA, V =-10V T C CE ABSOLUTE MAXIMUM RATINGS. f=50MHz PARAMETER SYMBOL VALUE UNIT Output Capacitance C 32 pF V =-20V, f=1MHz obo CB Collector-Base Voltage V -220 V CBO Switching Times t 67 ns I =-1A, I =-100mA on C B1 Collector-Emitter Voltage V -200 V t 1140 ns I =100mA, V =-50V CEO off B2 CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -5 A CM Continuous Collector Current I -2 A C THERMAL CHARACTERISTICS Practical Power Dissipation* P 1.58 W totp PARAMETER SYMBOL MAX. UNIT Power Dissipation at T =25C P 1.2 W amb tot Thermal Resistance: Junction to Ambient R 150 C/W Operating and Storage Temperature Range T :T -55 to +200 C th(j-amb) j stg Junction to Case R 50 C/W th(j-case) *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -220 -300 V I =-100A (BR)CBO C Voltage 4.0 Collector-Emitter Breakdown V -220 -300 V IC=-1A, RB 1K (BR)CER D.C. 150 Voltag t1 D=t1/tP 3.0 Collector-Emitter Breakdown V -200 -240 V I =-10mA* (BR)CEO C Voltage 100 t P D=0.6 2.0 Emitter-Base Breakdown V -6 -8 V I =-100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I -50 nA V =-200V CBO CB D=0.1 -1 A V =-200V, T =100C CB amb D=0.05 Single Pulse 0 Collector Cut-Off Current I -50 nA V =-200V -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 CER CB R 1K -1 A V =-200V, T =100C CB amb T -Temperature (C) Pulse Width (seconds) Emitter Cut-Off Current I -10 nA V =-6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V -30 -50 mV I =-100mA, I =-10mA* CE(sat) C B Voltage -110 -150 mV I =-1A, I =-100mA* C B -150 -250 mV I =-2A, I =-400mA* C B Base-Emitter V -920 -1050 mV I =-2A, I =-400mA BE(sat) C B Saturation Voltage 3-325 3-324 Thermal Resistance (C/W) s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX956 ZTX956 HIGH CURRENT TRANSISTOR ISSUE 3 JUNE 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 2 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 5 Amps peak current Base-Emitter V -770 -900 mV IC=-2A, V =-5V* BE(on) CE * Very low saturation voltage Turn-On Voltage * Excellent gain characteristics up to 2 Amps Static Forward h 100 200 I =-10mA, V =-5V* FE C CE * Spice model available C Current Transfer Ratio 100 200 300 I =-1A, V =-5V* C CE B E 50 150 I =-2A, V =-5V* C CE 10 I =-5A, V =-5V* C CE E-Line TO92 Compatible Transition Frequency f 110 MHz I =-100mA, V =-10V T C CE ABSOLUTE MAXIMUM RATINGS. f=50MHz PARAMETER SYMBOL VALUE UNIT Output Capacitance C 32 pF V =-20V, f=1MHz obo CB Collector-Base Voltage V -220 V CBO Switching Times t 67 ns I =-1A, I =-100mA on C B1 Collector-Emitter Voltage V -200 V t 1140 ns I =100mA, V =-50V CEO off B2 CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -5 A CM Continuous Collector Current I -2 A C THERMAL CHARACTERISTICS Practical Power Dissipation* P 1.58 W totp PARAMETER SYMBOL MAX. UNIT Power Dissipation at T =25C P 1.2 W amb tot Thermal Resistance: Junction to Ambient R 150 C/W Operating and Storage Temperature Range T :T -55 to +200 C th(j-amb) j stg Junction to Case R 50 C/W th(j-case) *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -220 -300 V I =-100A (BR)CBO C Voltage 4.0 Collector-Emitter Breakdown V -220 -300 V IC=-1A, RB 1K (BR)CER D.C. 150 Voltag t1 D=t1/tP 3.0 Collector-Emitter Breakdown V -200 -240 V I =-10mA* (BR)CEO C Voltage 100 t P D=0.6 2.0 Emitter-Base Breakdown V -6 -8 V I =-100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I -50 nA V =-200V CBO CB D=0.1 -1 A V =-200V, T =100C CB amb D=0.05 Single Pulse 0 Collector Cut-Off Current I -50 nA V =-200V -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 CER CB R 1K -1 A V =-200V, T =100C CB amb T -Temperature (C) Pulse Width (seconds) Emitter Cut-Off Current I -10 nA V =-6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V -30 -50 mV I =-100mA, I =-10mA* CE(sat) C B Voltage -110 -150 mV I =-1A, I =-100mA* C B -150 -250 mV I =-2A, I =-400mA* C B Base-Emitter V -920 -1050 mV I =-2A, I =-400mA BE(sat) C B Saturation Voltage 3-325 3-324 Thermal Resistance (C/W)