ZXT13P12DE6TA Diodes Incorporated

ZXT13P12DE6TA electronic component of Diodes Incorporated
ZXT13P12DE6TA Diodes Incorporated
ZXT13P12DE6TA Bipolar Transistors - BJT
ZXT13P12DE6TA  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of ZXT13P12DE6TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZXT13P12DE6TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. ZXT13P12DE6TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 12 V 4 A 55MHz 1.1 W Surface Mount SOT-23-6
Datasheet: ZXT13P12DE6TA Datasheet (PDF)
Price (USD)
1: USD 1.1513 ea
Line Total: USD 1.15 
Availability : 2196
  
Ship by Wed. 03 Sep to Fri. 05 Sep
QtyUnit Price
1$ 1.1513
10$ 0.7175
100$ 0.4235
500$ 0.3366
1000$ 0.3102
3000$ 0.2761
6000$ 0.264

Availability 2196
Ship by Wed. 03 Sep to Fri. 05 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1513
10$ 0.7175
100$ 0.4235
500$ 0.3366
1000$ 0.3102
3000$ 0.2761
6000$ 0.264

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZXT13P12DE6TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZXT13P12DE6TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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ZXT13P12DE6 12V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26 Features Mechanical Data BV > -12V Case: SOT26 CEO I = -4A Continuous Collector Current Case Material: Molded Plastic, Green Molding Compound. C I = -15A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM R = 37m for a Low Equivalent On-Resistance Moisture Sensitivity: Level 1 per J-STD-020 CE(sat) Low Saturation Voltage of <-90mV max -1A Terminals: Finish Matte Tin Plated Leads. h Characterized up to -15A for High Current Gain Hold-Up Solderable per MIL-STD-202, Method 208 FE Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.015 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications DC-DC Converters Power Management Functions Power Switches Motor Control C SOT26 B E Device Symbol Pin-Out Top Top View Ordering Information (Notes 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXT13P12DE6TA P12D 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZXT13P12DE6 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -7.5 V EBO Base Current I -500 mA B Continuous Collector Current -4 A I C Peak Pulse Collector Current -15 A I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 1.1 (Note 5) 8.8 Power Dissipation W P D Linear Derating Factor 1.7 mW/C (Note 6) 13.6 (Note 5) 113 Thermal Resistance, Junction to Ambient R JA (Note 6) 73 C/W Thermal Resistance, Junction to Lead (Note 7) R 18.61 JL Operating and Storage Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with collector leads on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is measured at t 5 seconds. 7. Thermal resistance from junction to solder-point (at the end of the collector leads). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information 1.2 10 1.0 DC 0.8 1 1s 100ms 0.6 10ms 0.4 100m 1ms 100s 0.2 Single Pulse Tamb=25C 10m 0.0 100m 1 10 0 20 40 60 80 100 120 140 160 V Collector-Emitter Voltage (V) Temperature (C) CE Derating Curve Safe Operating Area 2 of 7 ZXT13P12DE6 October 2015 Diodes Incorporated www.diodes.com Document Number: DS33637 Rev. 2 - 2 ADVANCE INFORMATION I Collector Current (A) C Max Power Dissipation (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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