ZXTP2012ASTZ Diodes Incorporated

ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE SUMMARY BV = -60V : R = 38m I = -3.5A CEO SAT C DESCRIPTION Packaged in the E-line outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES 3.5 amps continuous current Up to 15 amps peak current Very low saturation voltages Excellent gain up to 10 amps APPLICATIONS DC - DC converters MOSFET gate drivers Power switches Motor control ORDERING INFORMATION DEVICE QUANTITY PER REEL PINOUT ZXTP2012ASTOA 2,000 units / reel ZXTP2012ASTZ 2,000 units / carton DEVICE MARKING ZXT P20 12 TOP VIEW ISSUE 2 - NOVEMBER 2005 1 SEMICONDUCTORS E-lineZXTP2012A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BV -100 V CBO Collector-emitter voltage BV -60 V CEO Emitter-base voltage BV -7 V EBO (a) Continuous collector current I -3.5 A C Peak pulse current I -15 A CM (a) Practical power dissipation at T =25C P 1.0 W A D Linear derating factor 8 mW/C (b) Power dissipation at T =25C P 0.71 W A D Linear derating factor 5.7 mW/C Operating and storage temperature range T,T -55 to 150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT (a) Junction to ambient R 125 C/W JA (b) Junction to ambient R 175 C/W JA NOTES (a) For a device through hole mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Collector lead length to solder point 4mm. (b) For a device mounted in a socket in still air conditions. Collector lead length 10mm. ISSUE 2 - NOVEMBER 2005 2 SEMICONDUCTORS