BC546xBK ... BC549xBK BC546xBK ... BC549xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren fr universellen Einsatz Version 2009-12-03 0.1 Power dissipation Verlustleistung 500 mW 4.6 Plastic case TO-92 Kunststoffgehuse (10D3) Weight approx. Gewicht ca. 0.18 g C B E Plastic material has UL classification 94V-0 Gehusematerial UL94V-0 klassifiziert Special packaging bulk 2 x 1.27 Sonder-Lieferform Schttgut Dimensions - Mae mm Maximum ratings (T = 25C) Grenzwerte (T = 25C) A A BC546 BC547 BC548/549 Collector-Emitter-voltage E-B short V 85 V 50 V 30 V CES Collector-Emitter-voltage B open V 65 V 45 V 30 V CEO Collector-Base-voltage E open V 80 V 50 V 30 V CBO Emitter-Base-voltage C open V 5 V EB0 1 Power dissipation Verlustleistung P 500 mW ) tot Collector current Kollektorstrom (dc) I 100 mA C Peak Collector current Kollektor-Spitzenstrom I 200 mA CM Peak Base current Basis-Spitzenstrom I 200 mA BM Peak Emitter current Emitter-Spitzenstrom - I 200 mA EM Junction temperature Sperrschichttemperatur T -55...+150C j Storage temperature Lagerungstemperatur T -55+150C S Characteristics (T = 25C) Kennwerte (T = 25C) j j Group A Group B Group C 2 DC current gain Kollektor-Basis-Stromverhltnis ) V = 5 V, I = 10 A h typ. 90 typ. 150 typ. 270 CE C FE V = 5 V, I = 2 mA h 110 ... 220 200 ... 450 420 ... 800 CE C FE V = 5 V, I = 100 mA h typ. 120 typ. 200 typ. 400 CE C FE h-Parameters at/bei V = 5 V, I = 2 mA, f = 1 kHz CE C Small signal current gain h typ. 220 typ. 330 typ. 600 fe Kleinsignal-Stromverstrkung Input impedance Eingangs-Impedanz h 1.6 ... 4.5 k 3.2 ...8.5 k 6 ... 15 k ie Output admittance Ausgangs-Leitwert h 18 < 30 S 30 < 60 S 60 < 110 S oe Reverser voltage transfer ratio -4 -4 -4 h typ. 1.5*10 typ. 2*10 typ. 3*10 re Spannungsrckwirkung 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden Diotec Semiconductor AG BC546xBK ... BC549xBK Characteristics (T = 25C) Kennwerte (T = 25C) j j Min. Typ. Max. Collector-Emitter cutoff current Kollektor-Emitter-Reststrom VCE = 80 V, (B-E short) BC546 ICES 0.2 nA 15 nA VCE = 50 V, (B-E short) BC547 ICES 0.2 nA 15 nA VCE = 30 V, (B-E short) BC548 / BC549 ICES 0.2 nA 15 nA VCE = 80 V, Tj = 125C, (B-E short) BC546 ICES 4 A VCE = 50 V, Tj = 125C, (B-E short) BC547 ICES 4 A VCE = 30 V, Tj = 125C, (B-E short) BC548 / BC549 ICES 4 A 2 Collector-Emitter saturation voltage Kollektor-EmitterSttigungsspg. ) I = 10 mA, I = 0.5 mA V 80 mV 200 mV C B CEsat I = 100 mA, I = 5 mA V 200 mV 600 mV C B CEsat 2 Base saturation voltage Basis-Sttigungsspannung ) IC = 10 mA, IB = 0.5 mA VBEsat 700 mV IC = 100 mA, IB = 5 mA VBEsat 900 mV 2 Base-Emitter-voltage Basis-Emitter-Spannung ) V = 5 V, I = 2 mA V 580 mV 660 mV 700 mV CE C BE V = 5 V, I = 10 mA V 720 mV CE C BE Gain-Bandwidth Product Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz fT 300 MHz Collector-Base Capacitance Kollektor-Basis-Kapazitt V = 10 V, I =i = 0, f = 1 MHz C 3.5 pF 6 pF CB E e CBO Emitter-Base Capacitance Emitter-Basis-Kapazitt VEB = 0.5 V, IC = ic = 0, f = 1 MHz CEB0 9 pF Noise figure Rauschzahl V = 5 V, I = 200 A, R = 2 k BC546 / BC547 F 2 dB 10 dB CE C G f = 1 kHz, f = 200 Hz BC548 / BC549 F 1.2 dB 4 dB Thermal resistance junction to ambient air 1 R < 200 K/W ) thA Wrmewiderstand Sperrschicht umgebende Luft Recommended complementary PNP transistors BC556 ... BC559 Empfohlene komplementre PNP-Transistoren Available current gain groups per type BC546A BC546B Lieferbare Stromverstrkungsgruppen pro Typ BC547A BC547B BC547C BC548A BC548B BC548C BC549B BC549C 2 Tested with pulses t = 300 s, duty cycle 2% Gemessen mit Impulsen t = 300 s, Schaltverhltnis 2% p p 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gltig wenn die Anschlussdrhte in 2 mm Abstand vom Gehuse auf Umgebungstemperatur gehalten werden 2