X-On Electronics has gained recognition as a prominent supplier of BC807-16 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC807-16 Bipolar Transistors - BJT are a product manufactured by Diotec. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC807-16 Diotec

BC807-16 electronic component of Diotec
BC807-16 Diotec
BC807-16 Bipolar Transistors - BJT
BC807-16  Semiconductors

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See Product Specifications
Part No. BC807-16
Manufacturer: Diotec
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 45V; 800mA; 310mW; SOT23
Datasheet: BC807-16 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1277 ea
Line Total: USD 0.13 
Availability - 124108
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
124108
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 0.1277
5 : USD 0.0476
10 : USD 0.042
500 : USD 0.0238
926 : USD 0.0202
2545 : USD 0.0192

   
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Current Gain
Power Dissipation
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We are delighted to provide the BC807-16 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC807-16 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications - Complementary NPN type available (BC817) MECHANICAL DATA - Case: SOT- 23, Molded plastic - Terminal: Solderable per MIL-STD-202, method 208 - Case material: Molded plastic, UL flammability classification rating 94V-0 - Moisture sensitivity: Level 1 per J-STD-020C - Lead free plating SOT-23 - Weight: 0.008grams (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power Dissipation P 0.3 W D I Collector Current - Continuous -0.5 A C Junction Temperature T 150 C J Storage Temperature Range T -55 to + 150 C STG PARAMETER VALUE SYMBOL UNIT Collector-Base Breakdown Voltage I = -10 A I = 0 V -50 V C E CBO I = -10 mA I = 0 V Collector-Emitter Breakdown Voltage -45 V C B CEO Emitter-Base Breakdown Voltage I = -1 AI = 0 V -5 V E C EBO V = -45 V I = 0 -0.1 A CB E I Collector Cut-off Current CBO V = -40 V I = 0 -0.2 A CB B Emitter Cut-off Current V = -4 V I = 0 I -0.1 A EB C EBO at I = -500mA I = 50 mA V Collector-Emitter Saturation Voltage -0.7 V C B CE(sat) Base-Emitter Saturation Voltage at I = -500 mA I = 50 mA V -1.2 V C B BE(sat) Transition Frequency V = -5 V I = -10 mA f = 50MHz f 80 MHz CE C T 807-16 100 250 V = -1 V I = -100 mA h DC Current Gain 807-25 160 400 CE C FE(1) 807-40 250 600 Version: F14 Document Number: DS S1404007BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 2 Gain Bandwidth Product VS. Collector Current Fig. 1 Power Derating Curve 1000 400 o T = 25 C A See Note 1 f = 20 MHz 300 -V = 5.0 V CE 100 200 -V = 1 V CE 100 10 1 10 100 1000 0 0 50 100 150 200 I , Collector Current (mA) C o T , Substrate Temperature ( C) SB Fig. 4 DC Current Gain VS. Collector Current Fig.3 Collector Sat Voltage VS. Collector Current 1000 1000 -V = 1V o CE - 50 C o 150 C o 25 C 100 o 25 C Typical -------- Limits 100 o 10 at T = 25 C A o 150 C o - 50 C -I / -I = 10 C B 1 10 0. 1 0. 1 1 10 100 1000 0 0. 1 0. 2 0. 3 0. 4 0. 5 -I , Collector Current (mA) -V , Collector Saturation Voltage (V) C CESAT Fig. 6 Typical Emitter-Collector Characteristics Fig.5 Typical Emitter-Collector Characterisitcs 100 500 0.4 2.8 3.2 2.4 0.35 1.4 80 2.0 400 1.8 0.3 60 1.6 0.25 300 1.0 1.2 0.2 40 200 0.8 0.15 0.6 20 100 0.1 0.4 -I = 0.05 mA B -I = 0.2 mA B 0 0 010 20 01 2 -V , Collector-Emitter Voltage (V) -V , Collector-Emitter Voltage (V) CE CE Document Number: DS S1404007 Version: F14 -I Collector Current (mA) -I , Collector Current (mA) C, c P , Power Dissipation (mW) D -I , Collector Current ( mA ) C f Gain Bandwidth Product T, h , DC Current Gain FE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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