Product Information

BC846C

BC846C electronic component of Diotec

Datasheet
Transistor: NPN; bipolar; 65V; 100mA; 250mW; SOT23

Manufacturer: Diotec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2106 ea
Line Total: USD 0.2106

69621 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
92093 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

Stock Image

BC846C
Diotec

1 : USD 0.2106
10 : USD 0.1261
25 : USD 0.0845
100 : USD 0.0676
250 : USD 0.0598

     
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Current Gain
Power Dissipation
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W E E E S H BC846A ... BC850C BC846A ... BC850C I = 100 mA V = 30...65 V C CEO h = 180/290/520 P = 250 mW FE tot SMD General Purpose NPN Transistors Tjmax = 150C SMD Universal-NPN-Transistoren Version 2018-09-10 Typical Applications Typische Anwendungen SOT-23 Signal processing, Signalverarbeitung, (TO-236) Switching, Amplification Schalten, Verstrken Commercial grade Standardausfhrung 1 1 +0.1 Suffix -Q: AEC-Q101 compliant ) Suffix -Q: AEC-Q101 konform ) 0.1 -0.2 1.1 2.9 1 1 Suffix -AQ: in AEC-Q101 qualification ) Suffix -AQ: in AEC-Q101 Qualifikation ) +0.1 0.4 -0.05 3 Features Besonderheiten General Purpose Universell anwendbar Type Three current gain groups Drei Stromverstrkungsklassen Code Compliant to RoHS, REACH, Konform zu RoHS, REACH, 1 2 1 1 Pb Conflict Minerals ) Konfliktmineralien ) 0.1 1 1 1.9 Mechanical Data ) Mechanische Daten ) Taped and reeled 3000 / 7 Gegurtet auf Rolle Weight approx. 0.01 g Gewicht ca. 1 = B 2 = E 3 = C Case material UL 94V-0 Gehusematerial Dimensions - Mae mm Solder & assembly conditions 260C/10s Lt- und Einbaubedingungen MSL = 1 Type Complementary PNP transistors Code Komplementre PNP-Transistoren BC846A/-Q/-AQ = 1A BC847A/-Q/-AQ = 1E BC848A/-AQ = 1E BC846B/-Q/-AQ = 1B BC847B/-Q/-AQ = 1F BC848B/-AQ = 1F BC846C/-AQ = 1C BC847C/-Q/-AQ = 1G BC848C/-AQ = 1G BC856 ... BC860 BC850A/-AQ = 1E BC849A/-AQ = 1E BC850B/-AQ = 1F BC849B/-AQ = 1F BC850C/-AQ = 1G BC849C/-AQ = 1G 2 2 Maximum ratings ) Grenzwerte ) BC848 BC846 BC847 BC850 BC849 Collector-Emitter-voltage Kollektor-Emitter-Spannung B open V 65 V 45 V 45 V 30 V CEO Collector-Base-voltage Kollektor-Basis-Spannung E open V 80 V 50 V 50 V 30 V CBO Emitter-Base-voltage Emitter-Basis-Spannung C open VEBO 6 V 5 V 3 Power dissipation Verlustleistung P 250 mW ) tot Collector current Kollektorstrom DC I 100 mA C Peak Collector current Kollektor-Spitzenstrom I 200 mA CM Junction temperature Sperrschichttemperatur T -55...+150C j Storage temperature Lagerungstemperatur TS -55+150C 1 Please note the detailed information on our website or at the beginning of the data book Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches 2 TA = 25C, unless otherwise specified TA = 25C, wenn nicht anders angegeben 2 3 Mounted on P.C. board with 3 mm copper pad at each terminal 2 Montage auf Leiterplatte mit 3 mm Kupferbelag (Ltpad) an jedem Anschluss Diotec Semiconductor AG BC846A ... BC850C Characteristics Kennwerte T = 25C Min. Typ. Max. j DC current gain Kollektor-Basis-Stromverhltnis Group A 90 V = 5 V, I = 10 A Group B h 150 CE C FE Group C 270 Group A 110 180 220 V = 5 V, I = 2 mA Group B h 200 290 450 CE C FE Group C 420 520 800 1 Collector-Emitter saturation voltage Kollektor-Sttigungsspannung ) I = 10 mA, I = 0.5 mA 90 mV 250 mV C B V CEsat I = 100 mA, I = 5 mA 200 mV 600 mV C B 2 Base-Emitter saturation voltage Basis-Sttigungsspannung ) I = 10 mA, I = 0.5 mA 700 mV C B V BEsat I = 100 mA, I = 5 mA 900 mV C B 2 Base-Emitter-voltage Basis-Emitter-Spannung ) V = 5 V, I = 2 mA 580 mV 660 mV 700 mV CE C V BE VCE = 5 V, IC = 10 mA 720 mV Collector-Base cutoff current Kollektor-Basis-Reststrom V = 30 V, (E open) 15 nA CB I CBO VCE = 30 V, Tj = 125C, (E open) 5 A Emitter-Base cutoff current VEB = 5 V, (C open) IEBO 100 nA Gain-Bandwidth Product Transitfrequenz V = 5 V, I = 10 mA, f = 100 MHz f 300 MHz CE C T Collector-Base Capacitance Kollektor-Basis-Kapazitt V = 10 V, I =i = 0, f = 1 MHz C 3.5 pF 6 pF CB E e CBO Emitter-Base Capacitance Emitter-Basis-Kapazitt V = 0.5 V, I = i = 0, f = 1 MHz C 9 pF EB C c EBO Thermal resistance junction to ambient 2 R < 420 K/W ) thA Wrmewiderstand Sperrschicht Umgebung Disclaimer: See data book page 2 or website Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet 1 Tested with pulses t = 300 s, duty cycle 2% p Gemessen mit Impulsen tp = 300 s, Schaltverhltnis 2% 2 2 Mounted on P.C. board with 3 mm copper pad at each terminal 2 Montage auf Leiterplatte mit 3 mm Kupferbelag (Ltpad) an jedem Anschluss 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
(DIOTEC)
Diotec Electronics
DIOTEC SEMICONDUCTOR
DIOTEC SEMICONDUCTOR AG

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