BC856B Diotec

BC856B electronic component of Diotec
BC856B Diotec
BC856B Bipolar Transistors - BJT
BC856B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC856B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC856B Bipolar Transistors - BJT are a product manufactured by Diotec. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC856B
Manufacturer: Diotec
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 65V; 100mA; 250mW; SOT23
Datasheet: BC856B Datasheet (PDF)
Price (USD)
1: USD 0.1063 ea
Line Total: USD 0.11 
Availability : 28453
  
Ship by Wed. 22 Oct to Fri. 24 Oct
QtyUnit Price
1$ 0.1063
10$ 0.065
100$ 0.0387
500$ 0.0276
1000$ 0.0253
3000$ 0.0165
9000$ 0.0132
24000$ 0.011

Availability 28453
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1063
10$ 0.065
100$ 0.0387
500$ 0.0276
1000$ 0.0253
3000$ 0.0165
9000$ 0.0132
24000$ 0.011


Availability 117726
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.126
5$ 0.1064
10$ 0.0924
100$ 0.0532
500$ 0.035


Availability 58200
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 18000
Multiples : 3000
QtyUnit Price
18000$ 0.0171


Availability 23377
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 14500
Multiples : 100
QtyUnit Price
14500$ 0.018
15800$ 0.0165
18000$ 0.0153
24000$ 0.0144


Availability 11640
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0391
12000$ 0.0264


Availability 117726
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 8098
Multiples : 1
QtyUnit Price
8098$ 0.0321
9390$ 0.0277
12346$ 0.021
21000$ 0.0177

   
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Current Gain
Power Dissipation
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We are delighted to provide the BC856B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC856B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856A/B, BC857A/B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Product SOT-23 Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix on packing code and prefix on date code Mechanical Data Case : SOT- 23 small outline plastic package Terminal : Matte tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed High temperature soldering guaranteed : 260C/10s Weight : 0.008 grams (approximately) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Symbol Value Units Parameter Power Dissipation P 200 mW D BC856 -80 Collector-Base Voltage V -50 V BC857 CBO BC858 -30 -65 BC856 V Collector-Emitter Voltage -45 V BC857 CEO BC858 -30 Emitter-Base Voltage V -5 V EBO Collector Current I -0.1 A C Junction and Storage Temperature Range T , T -55 to + 150 C J STG Notes : 1. Valid provided that electrodes are kept at ambient temperature Version : F14Small Signal Product o Electrical Characteristics ( T = 25 C unless otherwise noted ) A Symbol Min Max Units Parameter BC856 -80 BC857 I = -10 AI = 0 V - V Collector-Base Breakdown Voltage -50 C E (BR)CBO BC858 -30 BC856 -65 BC857 I = -10mA I = 0 V - V Collector-Emitter Breakdown Voltage -45 C B (BR)CEO BC858 -30 I = -1 AI = 0 V Emitter-Base Breakdown Voltage -5 - V E C (BR)EBO BC856 V = -70V - -100 CB I = 0 I Collector Cut-off Current BC857 V = -45V - -100 nA E CBO CB BC858 V = -25V - -100 CB V = -5V I =0 I Emitter Cut-off Current --0.1 A EB C EBO BC856A, BC857A, BC858A 125 250 BC856B, BC857B, BC858B V = -5V I = -2mA h DC Current Gain 220 475 CE C FE BC857C, BC858C 420 800 Collector-Emitter Saturation Voltage I = -100mA I = -5mA V - -0.65 V C B CE(sat) I = -100mA I = -5mA V Base-Emitter Saturation Voltage --1.1 V C B BE(sat) Transition Frequency V = -5V I = -10mA f= 100MHz f 100 - MHz CE C T Version : F14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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