BC857B Diotec

BC857B electronic component of Diotec
BC857B Diotec
BC857B Bipolar Transistors - BJT
BC857B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC857B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857B Bipolar Transistors - BJT are a product manufactured by Diotec. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC857B
Manufacturer: Diotec
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 45V; 100mA; 250mW; SOT23
Datasheet: BC857B Datasheet (PDF)
Price (USD)
1: USD 0.1162 ea
Line Total: USD 0.12 
Availability : 40699
  
Ship by Mon. 25 Aug to Wed. 27 Aug
QtyUnit Price
1$ 0.1162
10$ 0.06
100$ 0.0437
500$ 0.03
1000$ 0.0253
3000$ 0.0165
9000$ 0.0143
24000$ 0.0132
45000$ 0.0121

Availability 40699
Ship by Mon. 25 Aug to Wed. 27 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1162
10$ 0.06
100$ 0.0437
500$ 0.03
1000$ 0.0253
3000$ 0.0165
9000$ 0.0143
24000$ 0.0132
45000$ 0.0121


Availability 146465
Ship by Mon. 25 Aug to Wed. 27 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1078
5$ 0.0868
10$ 0.077
100$ 0.0462
500$ 0.0322

   
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Current Gain
Power Dissipation
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We are delighted to provide the BC857B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856A/B, BC857A/B/C, BC858A/B/C 200mW, PNP Small Signal Transistor Small Signal Product SOT-23 Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix on packing code and prefix on date code Mechanical Data Case : SOT- 23 small outline plastic package Terminal : Matte tin plated, lead free, solderable per MIL-STD-202, method 208 guaranteed High temperature soldering guaranteed : 260C/10s Weight : 0.008 grams (approximately) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Maximum Ratings Symbol Value Units Parameter Power Dissipation P 200 mW D BC856 -80 Collector-Base Voltage V -50 V BC857 CBO BC858 -30 -65 BC856 V Collector-Emitter Voltage -45 V BC857 CEO BC858 -30 Emitter-Base Voltage V -5 V EBO Collector Current I -0.1 A C Junction and Storage Temperature Range T , T -55 to + 150 C J STG Notes : 1. Valid provided that electrodes are kept at ambient temperature Version : F14Small Signal Product o Electrical Characteristics ( T = 25 C unless otherwise noted ) A Symbol Min Max Units Parameter BC856 -80 BC857 I = -10 AI = 0 V - V Collector-Base Breakdown Voltage -50 C E (BR)CBO BC858 -30 BC856 -65 BC857 I = -10mA I = 0 V - V Collector-Emitter Breakdown Voltage -45 C B (BR)CEO BC858 -30 I = -1 AI = 0 V Emitter-Base Breakdown Voltage -5 - V E C (BR)EBO BC856 V = -70V - -100 CB I = 0 I Collector Cut-off Current BC857 V = -45V - -100 nA E CBO CB BC858 V = -25V - -100 CB V = -5V I =0 I Emitter Cut-off Current --0.1 A EB C EBO BC856A, BC857A, BC858A 125 250 BC856B, BC857B, BC858B V = -5V I = -2mA h DC Current Gain 220 475 CE C FE BC857C, BC858C 420 800 Collector-Emitter Saturation Voltage I = -100mA I = -5mA V - -0.65 V C B CE(sat) I = -100mA I = -5mA V Base-Emitter Saturation Voltage --1.1 V C B BE(sat) Transition Frequency V = -5V I = -10mA f= 100MHz f 100 - MHz CE C T Version : F14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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