5962-89539012A(NSC) E2v

5962-89539012A(NSC) electronic component of E2v Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 5962-89539012A(NSC) across the USA, India, Europe, Australia, and various other global locations. 5962-89539012A(NSC) are a product manufactured by E2v. We provide cost-effective solutions for 5962-89539012A(NSC), ensuring timely deliveries around the world.

Part No. 5962-89539012A(NSC)
Manufacturer: E2v
Category: Unclassified
Description: AC157/C DIE NSC-LCC
A low-cost, ultra miniature NSC Diode designed for use in space applications.
Datasheet:
Price (USD)
1: USD 327.8601 ea
Line Total: USD 327.86 
Availability : 0
  
QtyUnit Price
1$ 327.8601
10$ 265.6367

Availability 0
Ship by Fri. 10 Oct to Thu. 16 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 327.8601
10$ 265.6367

   
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We are delighted to provide the 5962-89539012A(NSC) from our E2v manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 5962-89539012A(NSC) and other electronic components in the E2v manufacturer and beyond.

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596289539012A is an E2v, a type of discrete semiconductor transistor. It is an NPN transistor, meaning that it has three pins: a base, a collector and an emitter. This type of transistor is designed for general use in amplifier, switching and linear applications, and is made from silicon with a maximum voltage rating of 35V and a maximum power rating of 150mW. It has a high current gain and an integrated frequency response, so it is suitable for use in circuit designs where frequency performance is a requirement.

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