X-On Electronics has gained recognition as a prominent supplier of M52S32321A-6BIG DRAM across the USA, India, Europe, Australia, and various other global locations. M52S32321A-6BIG DRAM are a product manufactured by Elite. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

M52S32321A-6BIG Elite

M52S32321A-6BIG electronic component of Elite
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Part No.M52S32321A-6BIG
Manufacturer: Elite
Category: DRAM
Description: SDRAM, 32MB, 2.5V, 166MHZ, VFBGA90
Datasheet: M52S32321A-6BIG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.5657 ea
Line Total: USD 3.57 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 3.5657
10 : USD 3.0876
25 : USD 2.9634
50 : USD 2.8569
100 : USD 2.7416
250 : USD 2.5594

   
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We are delighted to provide the M52S32321A-6BIG from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the M52S32321A-6BIG and other electronic components in the DRAM category and beyond.

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ESMT M52S32321A Revision History : Revision 1.0 (Oct. 31, 2006) - Original Revision 1.1 (Dec. 29, 2006) - Add -6 spec Revision 1.2 (Mar. 02, 2007) - Modify VOH and VOL - Delete BGA ball name of packing dimensions Revision 1.3 (May. 14,2007) - Modify tSS (1.5ns => 2ns) and tSH(1ns => 1.5ns) Revision 1.4 (Jul. 10,2007) - Modify type error Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.4 1/29 ESMT M52S32321A SDRAM 512K x 32Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION The M52S32321A is 33,554,432 bits synchronous high z 2.5V power supply data rate Dynamic RAM organized as 2 x 524,288 words by z LVCMOS compatible with multiplexed address 32 bits, fabricated with high performance CMOS technology. z Dual banks operation Synchronous design allows precise cycle control with the z MRS cycle with address key programs use of system clock I/O transactions are possible on every - CAS Latency (1, 2 & 3 ) clock cycle. Range of operating frequencies, programmable - Burst Length (1, 2, 4, 8 & full page) burst length and programmable latencies allow the same - Burst Type (Sequential & Interleave) device to be useful for a variety of high bandwidth, high z EMRS cycle with address key programs. performance memory system applications. z All inputs are sampled at the positive going edge of the system clock z Burst Read Single-bit Write operation ORDERING INFORMATION z Special Function Support. - PASR (Partial Array Self Refresh ) MAX Part NO. Package Comments - TCSR (Temperature compensated Self Refresh) Freq. - DS (Driver Strength) M52S32321A -10BG 100MHz 90 Ball VFBGA Pb-free z DQM for masking z Auto & self refresh M52S32321A -7.5BG 133MHz 90 Ball VFBGA Pb-free z 64ms refresh period (4K cycle) M52S32321A -6BG 166MHz 90 Ball VFBGA Pb-free PIN CONFIGURATION (TOP VIEW) 90 Ball FBGA 1 2 3 4 5 6 7 8 9 A DQ26 DQ24 VSS VDD DQ23 DQ21 B DQ28 VDDQVSSQ VDDQVSSQDQ19 C VSSQ DQ27 DQ25 DQ22 DQ20VDDQ D VSSQ DQ29 DQ30 DQ17 DQ18VDDQ E VDDQ DQ31 NC NC DQ16 VSSQ F VSS DQM3 A3 A2 DQM2VDD G A4 A5 A6 A10 A0 A1 H A7 A8 NC NC NC NC J CLK CKE A9 BA CS RAS K DQM1 NC NC DQM0 CAS WE L VDDQ DQ8 VSS VDD DQ7 VSSQ M VSSQ DQ10 DQ9 DQ6 DQ5 VDDQ N VSSQ DQ12 DQ14 DQ1 DQ3 VDDQ P DQ11 VDDQVSSQ VDDQVSSQ DQ4 R DQ13 DQ15 VSS VDD DQ0 DQ2 Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.4 2/29

Tariff Desc

8542.32.00 -- Memories
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