X-On Electronics has gained recognition as a prominent supplier of MR4A08BCMA35R MRAM across the USA, India, Europe, Australia, and various other global locations. MR4A08BCMA35R MRAM are a product manufactured by Everspin. We provide cost-effective solutions for MRAM, ensuring timely deliveries around the world.

MR4A08BCMA35R Everspin

MR4A08BCMA35R electronic component of Everspin
MR4A08BCMA35R Everspin
MR4A08BCMA35R MRAM
MR4A08BCMA35R  Semiconductors

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See Product Specifications
Part No. MR4A08BCMA35R
Manufacturer: Everspin
Category: MRAM
Description: MRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM
Datasheet: MR4A08BCMA35R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 45.8175 ea
Line Total: USD 114543.75 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Tue. 20 May to Thu. 22 May
MOQ : 2500
Multiples : 2500
2500 : USD 45.8175

   
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We are delighted to provide the MR4A08BCMA35R from our MRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MR4A08BCMA35R and other electronic components in the MRAM category and beyond.

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MR4A08B 2M x 8 MRAM Memory FEATURES +3.3 Volt power supply Fast 35 ns read/write cycle SRAM compatible timing Unlimited read & write endurance Data always non-volatile for >20-years at temperature RoHS-compliant small footprint BGA and TSOP2 packages All products meet MSL-3 moisture sensitivity level BENEFITS One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs Improves reliability by replacing battery-backed SRAM INTRODUCTION The MR4A08B is a 16,777,216-bit magnetoresistive random access RoHS memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on power loss by low- voltage inhibit circuitry to prevent writes with voltage out of specification. The MR4A08B is the ideal memory solution for applications that must permanently store and retrieve critical data and programs quickly. The MR4A08B is available in small footprint 400-mil, 44-lead plastic small-outline TSOP type-II package or 10 mm x 10 mm, 48-pin ball grid array (BGA) package with 0.75 mm ball centers. These packages are com- patible with similar low-power SRAM products and other non-volatile RAM products. The MR4A08B provides highly reliable data storage over a wide range of temperatures. The product is of- fered with commercial (0 to +70 C) and industrial (-40 to +85 C) operating temperature range options. CONTENTS 1. DEVICE PIN ASSIGNMENT......................................................................... 2 2. ELECTRICAL SPECIFICATIONS................................................................. 4 3. TIMING SPECIFICATIONS.......................................................................... 7 4. ORDERING INFORMATION....................................................................... 11 5. MECHANICAL DRAWING.......................................................................... 12 6. REVISION HISTORY...................................................................................... 14 How to Reach Us.......................................................................................... 15 Copyright 2018 Everspin Technologies 1 MR4A08B Rev. 8.7 3/2018MR4A08B 1. DEVICE PIN ASSIGNMENT Figure 1.1 Block Diagram OUTPUT G ENABLE OUTPUT ENABLE BUFFER 10 A 20:0 ADDRESS ROW BUFFER 11 COLUMN 21 DECODER DECODER CHIP E 8 OUTPUT 8 8 ENABLE SENSE BUFFER BUFFER AMPS 2M x 8 BIT MEMORY WRITE W ARRAY ENABLE FINAL BUFFER 8 8 WRITE 8 WRITE DQ 7:0 DRIVER DRIVERS WRITE ENABLE Table 1.1 Pin Functions Signal Name Function A Address Input E Chip Enable W Write Enable G Output Enable DQ Data I/O V Power Supply DD V Ground SS DC Do Not Connect NC No Connection Copyright 2018 Everspin Technologies 2 MR4A08B Rev. 8 .7 3/2018

Tariff Desc

8542.32.00 33 No ..Memory cards (other than "smart" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
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