T N A I L P M O C Pacific Silicon Sensor Series 9 Data Sheet Part Description AD800-9-TO52-S1 Order 06-026 2 ACTIVE AREA: 0.50 mm (800 m DIA) PIN 1 2.54 CATHODE PIN CIRCLE 0.46 3 PL 5.40 3.00 101 VIEWING 4.70 ANGLE PIN 4 PIN 3 2.70 CASE ANODE 1 3.60 12.7 3 PL FRONTSIDE VIEW BACKSIDE VIEW FEATURES DESCRIPTION APPLICATIONS 2 0.50 mm High Speed, Low Noise Avalanche Photodiode 800 m active area High speed optical with N on P construction. Hermetically packaged in a communications Low slope multiplication curve TO-52-S1 with a clear borosilicate glass window cap. Laser range finder High speed, low noise NIR enhanced Medical equipment High speed photometry ABSOLUTE MAXIMUM RATING SPECTRAL RESPONSE at M = 100 SYMBOL PARAMETER MIN MAX UNITS T Storage Temp -55 +125 C STG T Operating Temp -40 +100 70 OP C Soldering Temp 60 T +260 SOLDERING C 10 seconds 50 Electrical Power - 100 mW Dissipation 22 C 40 Optical Peak Value, 30 - 200 mW once for 1 second 20 Continuous Optical I (DC) - 250 A PH Operation 10 Pulsed Signal Input I (AC) - 1 mA PH 0 50 s on / 1 ms off 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) ELECTRO-OPTICAL CHARACTERISTICS 22 C SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS I Dark Current M = 100* --- 2.0 6.0 nA D C Capacitance M = 100* --- 2.0 --- pF V Breakdown Voltage I = 2 A 180 240 --- V BR D Temperature Coefficient of V --- 1.55 --- V/K BR Responsivity = 0 V = 905 nm 55 60 --- A/W M = 100 Bandwidth -3dB --- 0.3 --- GHz 3dB Rise Time M = 100 --- 900 --- ps t r Optimum Gain 50 60 --- --- --- Excess Noise factor M = 100 2.5 --- --- Excess Noise index M = 100 0.2 1/2 --- --- Noise Current M = 100 3.0 pA/Hz --- Max Gain 200 --- -14 1/2 --- --- NEP Noise Equivalent Power 4.0 X 10 M = 100 = 905 nm W/Hz * Measurement conditions: Setup of photo current 10 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo current up to 1 A, (M = 100) by internal multiplication due to an increasing bias voltage. Disclaimer: Due to our policy of continued development, specifications are subject to change without notice. 9/14/2010 Page 1 of 2 S H o R RESPONSIVITY (A/W)TYPICAL GAIN vs BIAS VOLTAGE QUANTUM EFFICIENCY for M = 100 10000 1.00 0.90 0.80 1000 0.70 0.60 100 0.50 0.40 0.30 10 0.20 0.10 1 0.00 10 30 50 70 90 110 130 150 170 190 210 230 250 400 500 600 700 800 900 1000 1100 BIAS VOLTAGE (V) WAVELENGTH (nm) DEVICE SCHEMATIC SUGGESTED CIRCUIT SCHEMATIC BIAS SUPPLY VOLTAGE CURRENT LIMITING RESISTOR PIN 1 MIN. 0.1 F CAPACITOR CLOSEST TO APD PIN 4 APD DIODE, PROTECTIVE CIRCUIT PIN 3 READ-OUT CIRCUIT OR 50 Ohm LOAD RESISTANCE APPLICATION NOTES Current should be limited by a protecting resistor or current limiting IC inside the power supply. Use of low noise read-out IC. For high gain applications (M>50) bias voltage should be temperature compensated. For low light level applications, blocking of ambient light should be used. HANDLING PRECAUTIONS: Soldering temperature - 260 C for 10 seconds max. The device must be protected against solder flux vapor. Minimum pin length - 2 mm ESD protection - Standard precautionary measures are sufficient. Storage - Store devices in conductive foam. Avoid skin contact with window. Clean window with Ethyl alcohol if necessary. Do not scratch or abrade window. USA: International sales: Pacific Silicon Sensor, Inc. Silicon Sensor International AG 5700 Corsa Avenue, 105 Peter-Behrens-Str. 15 Westlake Village, CA 91362 USA D-12459 Berlin, Germany Phone (818) 706-3400 Phone +49 (0)30-63 99 23 10 Fax (818) 889-7053 Fax +49 (0)30-63 99 23 33 Email: sales pacific-sensor.com Email: sales silicon-sensor.de www.pacific-sensor.com www.silicon-sensor.de Proud Members of the Silicon Sensor International AG Group of companies 9/14/2010 Page 2 of 2 GAIN QE