The SS36A SMA Schottky Barrier Diode (SBD) with 60V 3A 700mV@3A ROHS manufactured by FUXINSEMI is a 2-terminal semiconductor device. It is designed to allow current flow in one direction, while blocking current in the other. It reduces the voltage drop across the device, thereby providing improved efficiency compared to a regular rectifier diode. It is constructed with a PN junction formed from a junction between N-type and P-type silicon. The diode has an operating temperature range of -55 to +125 degrees C and a high surge capability. It features low reverse leakage current and high forward current rating. The diode is lead (Pb) free, RoHS compliant, and suitable for industrial use.