BR88 GeneSiC Semiconductor

BR86 thru BR810 V = 600 V - 1000 V RRM Single Phase Silicon I = 8 A O Bridge Rectifier Features Low forward voltage drop Low leakage current Types from 600 V up to 1000 V V BR-8 Package RRM Not ESD Sensitive Mechanical Data Mounting: Hole thru for 6 screw Mounting position: Any Maximum ratings at Tc = 25 C, unless otherwise specified Conditions BR810 Parameter Symbol BR86 BR88 Unit V 1000 Repetitive peak reverse voltage 600 800 V RRM RMS reverse voltage V 420 560 700 V RMS V 1000 DC blocking voltage 600 800 V DC Operating temperature T -65 to 125 -65 to 125 -65 to 125 C j Storage temperature T -65 to 150 -65 to 150 -65 to 150 C stg Electrical characteristics at Tc = 25 C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Conditions BR810 Parameter Symbol BR86 BR88 Unit Maximum average forward I T = 50 C 8.0 8.0 8.0 A O c rectified current t = 8.3 ms, half sine Peak forward surge current I 250 250 250 A FSM p Maximum instantaneous forward V I = 4.0 A 1.1 1.1 1.1 V F F voltage drop per bridge element T = 25 C 10 Maximum DC reverse current at a 10 10 I A R rated DC blocking voltage T = 100 C 200 200 200 a 1 Oct. 2018 BR86 thru BR810 2 Oct. 2018