GD2X100MPS06N TM 650V 200A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 650 V RRM IF (T = 86C) = 200 A * C Q = 308 nC * C Features Package Gen4 Thin Chip Technology for Low V F A A Superior Figure of Merit Q /I C F 100% Avalanche Tested Enhanced Surge Current Robustness RoHS Temperature Independent Fast Switching Low Thermal Resistance Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness SOT-227 REACH K K Advantages Applicaoti ns Op timal Price Performance EV Fast Chargers Improved System E c iency Solar Inverters Reduced Cooling Requirements Switched Mode Power Supply (SMPS) Increased System Power Density High frequency Converters Zero Reverse Recovery Current Motor Drives High System Reliability Induc tion Heating and Welding Easy to Parallel without Thermal Runaway Uninterrup tible Power Supply (UPS) Enables Extremely Fast Switching Pulsed Power Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage (Per Leg) V 650 V RRM TC = 75C, D = 1 108 / 216 Continuous Forward Current (Per Leg / Per Device) IF TC = 100C, D = 1 90 / 180 A Fig. 4 T = 86C, D = 1 100 / 200 C T = 25C, t = 10 ms 550 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave (Per Leg) T = 150C, t = 10 ms 440 C P Repetitive Peak Forward Surge Current, Half Sine Wave TC = 25C, tP = 10 ms 330 I A F,RM (Per Leg) TC = 150C, tP = 10 ms 231 Non-Repetitive Peak Forward Surge Current (Per Leg) I T = 25C, t = 10 s 2750 A F,MAX C P 2 2 2 i t Value (Per Leg) i dt T = 25C, t = 10 ms 1512 A s C P Non-Repetitive Avalanche Energy (Per Leg) EAS L = 0.2 mH, IAS = 100 A 920 mJ Diode Ruggedness (Per Leg) dV/dt V = 0 ~ 520 V 200 V/ns R Power Dissipation (Per Leg / Per Device) P T = 25C 301 / 602 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C * Per Device Rev 21/Mar Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD2X100MPS06N/GD2X100MPS06N.pdf Page 1 of 7GD2X100MPS06N TM 650V 200A SiC Schoktt y MPS Diode Electrical Characteriscti s (Per Leg) Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 100 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 100 A, T = 175C 1.8 F j V = 650 V, T = 25C 1 5 R j Reverse Current I A Fig. 2 R V = 650 V, T = 175C 18 R j VR = 200 V 105 Total Capacitive Charge Q nC Fig. 7 C VR = 400 V 154 IF IF,MAX dI /dt = 200 A/s F V = 200 V R Switching Time tS < 10 ns V = 400 V R VR = 1 V, f = 1MHz 2450 Total Capacitance C pF Fig. 6 VR = 400 V, f = 1MHz 210 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.5 C/W Fig. 9 thJC (Per Leg) Weight WT 28.0 g Mounting Torque T Screws to Heatsink 1.5 Nm M Terminal Connection Torque T M4 Screws 1.3 Nm C t = 1s (50/60 Hz) 3000 Isolation Voltage(RMS) V V ISO t = 60s (50/60 Hz) 2500 d Terminal to Terminal 10.5 Ctt Creepage Distance on Surface mm d Terminal to Backside 8.5 Ctb d Terminal to Terminal 3.2 Stt Striking Distance Through Air mm d Terminal to Backside 6.8 Stb Rev 21/Mar Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD2X100MPS06N/GD2X100MPS06N.pdf Page 2 of 7