X-On Electronics has gained recognition as a prominent supplier of GD50MPS12H Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. GD50MPS12H Schottky Diodes & Rectifiers are a product manufactured by GeneSiC Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

GD50MPS12H GeneSiC Semiconductor

GD50MPS12H electronic component of GeneSiC Semiconductor
GD50MPS12H GeneSiC Semiconductor
GD50MPS12H Schottky Diodes & Rectifiers
GD50MPS12H  Semiconductors

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See Product Specifications
Part No. GD50MPS12H
Manufacturer: GeneSiC Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 1200V 50A TO-247-2 SiC Schottky MPS
Datasheet: GD50MPS12H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 17.112 ea
Line Total: USD 17.11 
Availability - 877
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
877
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 17.112
10 : USD 14.685
30 : USD 14.146
120 : USD 13.376
270 : USD 13.376
510 : USD 13.376
1020 : USD 13.09
2520 : USD 12.606

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GD50MPS12H from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GD50MPS12H and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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GD50MPS12H TM 1200V 50A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1200 V RRM IF (T = 144C) = 50 A C Q = 162 nC C Features Package Gen4 Thin Chip Technology for Low V F Case Superior Figure of Merit Q *V C F 100% Avalanche (UIL) Tested Enhanced Surge Current Withstand Capability RoHS Temperature Independent Fast Switching Low Thermal Resistance Positi ve Temperature Coe c ient of V F High dV/dt Ruggedness TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency Electric Vehicles and Fast Chargers High System Reliability Solar Inverters Optimal Price Performance Train Auxiliary Power Supplies Reduced Cooling Requirements High frequency Converters Increased System Power Density Motor Drives Zero Reverse Recovery Current Induction Heating and Welding Easy to Parallel without Thermal Runaway Uninterrup tible Power Supplies Enables Extremely Fast Switching Pulsed Power Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 86 Continuous Forward Current IF TC = 135C, D = 1 59 A Fig. 4 T = 144C, D = 1 50 C T = 25C, t = 10 ms 400 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 320 C P TC = 25C, tP = 10 ms 240 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 168 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 2000 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 800 A s C P Non-Repetitive Avalanche Energy EAS L = 0.4 mH, IAS = 50 A 452 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 463 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD50MPS12H/GD50MPS12H.pdf Page 1 of 7GD50MPS12H TM 1200V 50A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 50 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 50 A, T = 175C 1.9 F j V = 1200 V, T = 25C 3 30 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 33 R j VR = 400 V 111 Total Capacitive Charge Q nC Fig. 7 C VR = 800 V 162 IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 1842 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 108 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.32 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jul Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD50MPS12H/GD50MPS12H.pdf Page 2 of 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
GENESIC SEMICONDUCTOR INC.
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