GD5F1GQ4UCYIGY Gigadevice

GD5F1GQ4UCYIGY electronic component of Gigadevice
GD5F1GQ4UCYIGY Gigadevice
GD5F1GQ4UCYIGY NAND Flash
GD5F1GQ4UCYIGY  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GD5F1GQ4UCYIGY NAND Flash across the USA, India, Europe, Australia, and various other global locations. GD5F1GQ4UCYIGY NAND Flash are a product manufactured by Gigadevice. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

Part No. GD5F1GQ4UCYIGY
Manufacturer: Gigadevice
Category: NAND Flash
Description: NAND Flash USE GD5F1GQ4UFYIGR
Datasheet:
Price (USD)
960: USD 1.6403 ea
Line Total: USD 1574.69 
Availability : 0
  
QtyUnit Price
960$ 1.6403

Availability 0
Ship by Mon. 18 Aug to Wed. 20 Aug
MOQ : 960
Multiples : 960
QtyUnit Price
960$ 1.6403

   
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We are delighted to provide the GD5F1GQ4UCYIGY from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GD5F1GQ4UCYIGY and other electronic components in the NAND Flash category and beyond.

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The GD5F1GQ4UCYIGY with NAND Flash USF manufactured by Gigadevice is a 1 gigabit (Gb) NAND Flash memory with an industry-standard, 54-ball FBGA (Fine-pitch Ball Grid Array) package. It features a high-performance VEngine interface that is optimized for synchronous NAND Flash devices and can provide a maximum data transfer rate of up to 100MHz. It has a page size of up to 8K bytes, a block size of up to 256K bytes, and an endurance of up to 8,000 program/erase cycles. In addition, it is capable of error correction code (ECC) with a performance up to 40-bit/512-byte for data reliability and enhanced durability. This device is an ideal choice for smart devices and embedded applications that require large memory capacity and fast data rates.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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