GT042P06M GOFORD

GT042P06M electronic component of GOFORD Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GT042P06M MOSFETs across the USA, India, Europe, Australia, and various other global locations. GT042P06M MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. GT042P06M
Manufacturer: GOFORD
Category: MOSFETs
Description: 60V 160A 3.6m@10V 2.5V 1 Piece P-Channel TO-263 MOSFETs ROHS
Datasheet: GT042P06M Datasheet (PDF)
Price (USD)
1: USD 2.703 ea
Line Total: USD 2.7 
Availability : 0
  
QtyUnit Price
1$ 2.703
10$ 1.7148
30$ 1.3684
100$ 1.1879
500$ 1.1078
800$ 1.0724

Availability 0
Ship by Thu. 27 Nov to Wed. 03 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.703
10$ 1.7148
30$ 1.3684
100$ 1.1879
500$ 1.1078
800$ 1.0724

   
Manufacturer
Product Category
Package
Continuous Drain Current Id
Type
Drain Source Voltage Vdss
Gate Threshold Voltage Vgsth@Id
Drain Source On Resistance Rdson@Vgs Id
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GT042P06M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT042P06M and other electronic components in the MOSFETs category and beyond.

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Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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