We are the renowned GS8342Q18BGD-250 SRAM seller and distributer in the USA, India, Europe, Australia, and beyond. GS8342Q18BGD-250 SRAM is a manufacturer from GSI Technology. X-ON Electronics Components provides affordable electronic SRAM in the USA.

GS8342Q18BGD-250

GS8342Q18BGD-250 electronic component of GSI Technology
Part No.GS8342Q18BGD-250
Manufacturer: GSI Technology
Category:SRAM
Description: SRAM 1.8 or 1.5V 2M x 18 36M
Datasheet: GS8342Q18BGD-250 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 58.136 ea
Line Total: USD 58.14

7 - Global Stock
Ships to you between
Tue. 04 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7 - WHS 1


Ships to you between Tue. 04 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1
1 : USD 47.2305
10 : USD 43.8035
30 : USD 42.228
60 : USD 41.1815
105 : USD 37.9155
255 : USD 36.961
510 : USD 35.65
1005 : USD 34.178
2505 : USD 33.925

We proudly offer the GS8342Q18BGD-250 SRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the GS8342Q18BGD-250 SRAM.
     
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GS8342Q08/09/18/36BD-357/333/300/250 357 MHz250 MHz 165-Bump BGA TM 36Mb SigmaQuad-II 1.8 V V DD Commercial Temp 1.8 V and 1.5 V I/O Industrial Temp Burst of 2 SRAM Features Clocking and Addressing Schemes Simultaneous Read and Write SigmaQuad Interface The GS8342Q08/09/18/36BD SigmaQuad-II SRAMs are JEDEC-standard pinout and package synchronous devices. They employ two input register clock Dual Double Data Rate interface inputs, K and K. K and K are independent single-ended clock Byte Write controls sampled at data-in time inputs, not differential inputs to a single differential clock input Burst of 2 Read and Write buffer. The device also allows the user to manipulate the 1.8 V +100/100 mV core power supply output register clock inputs quasi independently with the C and 1.5 V or 1.8 V HSTL Interface C clock inputs. C and C are also independent single-ended Pipelined read operation clock inputs, not differential inputs. If the C clocks are tied Fully coherent read and write pipelines high, the K clocks are routed internally to fire the output ZQ pin for programmable output drive strength registers instead. IEEE 1149.1 JTAG-compliant Boundary Scan Pin-compatible with present 144 Mb devices Each internal read and write operation in a SigmaQuad-II B2 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package RAM is two times wider than the device I/O bus. An input data RoHS-compliant 165-bump BGA package available bus de-multiplexer is used to accumulate incoming data before it is simultaneously written to the memory array. An output data multiplexer is used to capture the data produced from a SigmaQuad Family Overview single memory array read and then route it to the appropriate The GS8342Q08/09/18/36BD are built in compliance with the output drivers as needed. Therefore the address field of a SigmaQuad-II SRAM pinout standard for Separate I/O SigmaQuad-II B2 RAM is always one address pin less than the synchronous SRAMs. They are 37,748,736-bit (36Mb) advertised index depth (e.g., the 4M x 8 has an 2M addressable SRAMs. The GS8342Q08/09/18/36BD SigmaQuad SRAMs index). are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement economical high performance networking systems. Parameter Synopsis -357 -333 -300 -250 tKHKH 2.8 ns 3.0 ns 3.3 ns 4.0 ns tKHQV 0.45 ns 0.45 ns 0.45 ns 0.45 ns Rev: 1.02c 8/2017 1/34 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see GS8342Q08/09/18/36BD-357/333/300/250 1M x 36 SigmaQuad-II SRAMTop View 1 2 3 4 5 6 7 8 9 10 11 NC/SA NC/SA NC/SA A CQ W BW2 K BW1 R SA CQ (288Mb) (72Mb) (144Mb) B Q27 Q18 D18 SA BW3 K BW0 SA D17 Q17 Q8 C D27 Q28 D19 V SA SA SA V D16 Q7 D8 SS SS D D28 D20 Q19 V V V V V Q16 D15 D7 SS SS SS SS SS E Q29 D29 Q20 V V V V V Q15 D6 Q6 DDQ SS SS SS DDQ F Q30 Q21 D21 V V V V V D14 Q14 Q5 DDQ DD SS DD DDQ G D30 D22 Q22 V V V V V Q13 D13 D5 DDQ DD SS DD DDQ H Doff V V V V V V V V V ZQ REF DDQ DDQ DD SS DD DDQ DDQ REF J D31 Q31 D23 V V V V V D12 Q4 D4 DDQ DD SS DD DDQ K Q32 D32 Q23 V V V V V Q12 D3 Q3 DDQ DD SS DD DDQ L Q33 Q24 D24 V V V V V D11 Q11 Q2 DDQ SS SS SS DDQ M D33 Q34 D25 V V V V V D10 Q1 D2 SS SS SS SS SS N D34 D26 Q25 V SA SA SA V Q10 D9 D1 SS SS P Q35 D35 Q26 SA SA C SA SA Q9 D0 Q0 R TDO TCK SA SA SA C SA SA SA TMS TDI 11 x 15 Bump BGA13 x 15 mm Body1 mm Bump Pitch Notes: 1. BW0 controls writes to D0:D8 BW1 controls writes to D9:D17 BW2 controls writes to D18:D26 BW3 controls writes to D27:D35. 2. A2, A3, and A10 are the expansion addresses. Rev: 1.02c 8/2017 2/34 2011, GSI Technology Specifications cited are subject to change without notice. For latest documentation see

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

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