HG24C512N HGSEMI

HG24C512N electronic component of HGSEMI
HG24C512N HGSEMI
HG24C512N EEPROM
HG24C512N  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of HG24C512N EEPROM across the USA, India, Europe, Australia, and various other global locations. HG24C512N EEPROM are a product manufactured by HGSEMI. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

Part No. HG24C512N
Manufacturer: HGSEMI
Category: EEPROM
Description: DIP-8 EEPROM ROHS
Datasheet: HG24C512N Datasheet (PDF)
Price (USD)
1: USD 1.1004 ea
Line Total: USD 1.1 
Availability : 1794
  
Ship by Tue. 25 Nov to Mon. 01 Dec
QtyUnit Price
1$ 1.1004
10$ 0.8958
50$ 0.5536
100$ 0.4312
500$ 0.39
1000$ 0.3695

Availability 1794
Ship by Tue. 25 Nov to Mon. 01 Dec
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.1004
10$ 0.8958
50$ 0.5536
100$ 0.4312
500$ 0.39
1000$ 0.3695

   
Manufacturer
Product Category
Category
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We are delighted to provide the HG24C512N from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HG24C512N and other electronic components in the EEPROM category and beyond.

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The HG24C512N with DIP-8 EEPROM ROHS is an 8-pin RoHS-compliant Electrically Erasable Programmable Read Only Memory (EEPROM) device manufactured by HGSEMI. It offers a wide range of non-volatile memory from 64 bytes to 64K bytes of space and a very fast access time. It is fabricated using advanced CMOS process and includes an array of EEPROMs that can be individually written and read. It has a wide operating voltage range of 1.8V - 5.5V. The device also includes internal hardware to protect the memory from accidental overwrites. It is ideal for industrial, medical, and automotive applications requiring low power and reliable data storage.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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