X-On Electronics has gained recognition as a prominent supplier of MMBT5551T G1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551T G1 Bipolar Transistors - BJT are a product manufactured by Hong Kong Chuangji. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT5551T G1 Hong Kong Chuangji

Name: MMBT5551T G1
Brand: Hong Kong Chuangji
SKU: MMBT5551TG1_Hong_Kong_Chuangji
Availability: InStock
Rating: 5 (11 reviews)

MMBT5551T G1 electronic component of Hong Kong Chuangji

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See Product Specifications

Part No.	MMBT5551T G1
Manufacturer:	Hong Kong Chuangji
Category:	Bipolar Transistors - BJT
Description:	160V 200mW 100@10mA,5V 600mA NPN SOT-523 Bipolar Transistors - BJT ROHS
Datasheet:	MMBT5551T G1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

50: USD 0.031 ea
Line Total: USD 1.55

Availability - 65038
Ship by Thu. 26 Jun to Tue. 01 Jul

MOQ: 50 Multiples: 50
Pack Size: 50

MMBT5551T G1 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

65038

Ship by Thu. 26 Jun to Tue. 01 Jul

MOQ : 50
Multiples : 50

50 : USD 0.031
500 : USD 0.0246
3000 : USD 0.0132
6000 : USD 0.0119
24000 : USD 0.0105
51000 : USD 0.0098

Specifications

Manufacturer

Hong Kong Chuangji Hong Kong Chuangji

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

Package

SOT - 523 SOT - 523

Rohs

y y

Collector Cut-Off Current Icbo

50 nA 50 nA

Collector-Emitter Breakdown Voltage Vceo

160 V 160 V

Power Dissipation Pd

200 mW 200 mW

Dc Current Gain Hfe@Ic Vce

100@10 mA , 5V 100@10 mA , 5V

Collector Current Ic

600 mA 600 mA

Transition Frequency Ft

100MHz 100MHz

Collector-Emitter Saturation Voltage Vcesat@Ic Ib

200 mV @50 mA , 5 mA 200 mV @50 mA , 5 mA

Transistor Type

NPN NPN

Operating Temperature

+ 150 C @ (Tj) + 150 C @ (Tj)

Notes:- Show Stocked Products With Similar Attributes.

MMBT5551T G1 Alternative Parts

We are delighted to provide the MMBT5551T G1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551T G1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

This MMBT5551T G1 is a Bipolar Transistor manufactured by Hong Kong Chuangji. It is an NPN transistor in a small outline transistor (SOT-523) type package. This device is rated for a collector-emitter voltage of up to 160 volts, a power dissipation of 200 milliwatts, a current gain (hfe) of 100@10mA, and a collector current of 600mA at 5 volts. It has been certified as RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
65038 Ship by Thu. 26 Jun to Tue. 01 Jul MOQ : 50 Multiples : 50	50 : USD 0.031 500 : USD 0.0246 3000 : USD 0.0132 6000 : USD 0.0119 24000 : USD 0.0105 51000 : USD 0.0098

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