MMBT5551T G1 Hong Kong Chuangji

MMBT5551T G1 electronic component of Hong Kong Chuangji
MMBT5551T G1 Hong Kong Chuangji
MMBT5551T G1 Bipolar Transistors - BJT
MMBT5551T G1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MMBT5551T G1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT5551T G1 Bipolar Transistors - BJT are a product manufactured by Hong Kong Chuangji. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MMBT5551T G1
Manufacturer: Hong Kong Chuangji
Category: Bipolar Transistors - BJT
Description: 160V 200mW 100@10mA,5V 600mA NPN SOT-523 Bipolar Transistors - BJT ROHS
Datasheet: MMBT5551T G1 Datasheet (PDF)
Price (USD)
50: USD 0.0312 ea
Line Total: USD 1.56 
Availability : 4025
  
Ship by Fri. 21 Nov to Thu. 27 Nov
QtyUnit Price
50$ 0.0312
500$ 0.0248
3000$ 0.0134
6000$ 0.0119
24000$ 0.0106
51000$ 0.0098

Availability 4025
Ship by Fri. 21 Nov to Thu. 27 Nov
MOQ : 50
Multiples : 50
QtyUnit Price
50$ 0.0312
500$ 0.0248
3000$ 0.0134
6000$ 0.0119
24000$ 0.0106
51000$ 0.0098

   
Manufacturer
Product Category
Package
Rohs
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Dc Current Gain Hfe@Ic Vce
Collector Current Ic
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Transistor Type
Operating Temperature
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT5551T G1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT5551T G1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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This MMBT5551T G1 is a Bipolar Transistor manufactured by Hong Kong Chuangji. It is an NPN transistor in a small outline transistor (SOT-523) type package. This device is rated for a collector-emitter voltage of up to 160 volts, a power dissipation of 200 milliwatts, a current gain (hfe) of 100@10mA, and a collector current of 600mA at 5 volts. It has been certified as RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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