BT60T60ANFK Huajing

BT60T60ANFK electronic component of Huajing
BT60T60ANFK Huajing
BT60T60ANFK IGBT Transistors
BT60T60ANFK  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BT60T60ANFK IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. BT60T60ANFK IGBT Transistors are a product manufactured by Huajing. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. BT60T60ANFK
Manufacturer: Huajing
Category: IGBT Transistors
Description: TO-3PN IGBTs ROHS
Datasheet: BT60T60ANFK Datasheet (PDF)
Price (USD)
1: USD 2.9282 ea
Line Total: USD 2.93 
Availability : 0
  
QtyUnit Price
1$ 2.9282
10$ 2.5313
30$ 2.2845
100$ 2.0299
500$ 1.9153
1000$ 1.864

Availability 0
Ship by Fri. 19 Sep to Wed. 24 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.9282
10$ 2.5313
30$ 2.2845
100$ 2.0299
500$ 1.9153
1000$ 1.864

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
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We are delighted to provide the BT60T60ANFK from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BT60T60ANFK and other electronic components in the IGBT Transistors category and beyond.

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The BT60T60ANFK is a TO-3PN IGBT module manufactured by Huajing and compliant with RoHS standards. The module features four Silicon IGBTs arranged in a bridge Configuration and is designed for high frequency motor drive applications. It is capable of dissipating up to 60A with a blocking voltage of 600V in a TO-3PN package. The module also offers a combined reverse paralleling capability to provide up to 1200Vpk on the +VCE terminal with a maximum junction temperature of 150C. It has a wide operating temperature range of -40C to +125C and is UL recognized. Additionally, the module features short circuit protection and overvoltage protection.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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