X-On Electronics has gained recognition as a prominent supplier of HC2M0650170D SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. HC2M0650170D SiC MOSFETs are a product manufactured by HXY MOS. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

HC2M0650170D HXY MOS

HC2M0650170D electronic component of HXY MOS
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See Product Specifications
Part No. HC2M0650170D
Manufacturer: HXY MOS
Category: SiC MOSFETs
Description: TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.5022 ea
Line Total: USD 9.5 
Availability - 24
Ship by Fri. 23 May to Wed. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24
Ship by Fri. 23 May to Wed. 28 May
MOQ : 1
Multiples : 1
1 : USD 9.5022
10 : USD 5.5045
30 : USD 4.9635
90 : USD 4.4153
510 : USD 4.1623
990 : USD 4.0485

   
Manufacturer
Product Category
Package
Rohs
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We are delighted to provide the HC2M0650170D from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HC2M0650170D and other electronic components in the SiC MOSFETs category and beyond.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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