2ED2181 (4) S06F 2ED2110S06M 650 V high-side and low-side gate driver with integrated bootstrap diode Features Product summary Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology V = 650 V max S OFFSET Negative VS transient immunity of 100 V I / I (typ.) = 2.5 A / 2.5 A o+pk o-pk Floating channel designed for bootstrap operation V = 10 V to 20 V CC Operating voltages (VS node) up to + 650 V Delay matching = 10 ns max. Maximum bootstrap voltage (VB node) of + 675 V Propagation delay = 90 ns Integrated ultra-fast, low resistance bootstrap diode Logic operational up to 11 V on VS Pin Negative voltage tolerance on inputs of 5 V Package Independent under voltage lockout for both channels Schmitt trigger inputs with hysteresis 3.3 V, 5 V and 15 V input logic compatible Maximum supply voltage of 25 V Shutdown input turns off both channels DSO-16 package Separate logic and power ground DSO-16 RoHS compliant Potential applications Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below: Motor drives, general purpose inverters having TRENCHSTOP IGBT6 or 600 V EasyPACK modules Refrigeration compressors, induction cookers, other major home appliances having RCD series IGBTs or TRENCHSTOP family IGBTs or their equivalent power stages Battery operated small home appliances such as power tools, vacuum cleaners using low voltage OptiMOS MOSFETs or their equivalent power stages Totem pole, half-bridge and full-bridge converters in offline AC-DC power supplies for industrial SMPS having high voltage CoolMOS super junction MOSFETs or TRENCHSTOP H3 and WR5 IGBT series High power LED and HID lighting having CoolMOS super junction MOSFETs Electric vehicle (EV) charging stations and battery management systems Driving 650 V SiC MOSFETs in above applications Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Ordering information Standard pack Base part number Package type Orderable part number Form Quantity 2ED2110S06M DSO 16 Tape and Reel 2500 2ED2110S06MXUMA1 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1 www.infineon.com/soi Page 1 of 25 2020-12-07 2ED2110S06M 650V high-side and low-side driver with integrated bootstrap diode Description The 2ED2110S06M is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineons SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 VDC on VS pin (VCC = 15 V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC MOSFET or IGBT in the high side configuration, which operate up to 650 V. Up to 650V HO V DD V V B DD HIN HIN V S TO SD SD LOAD V CC LIN LIN V COM SS V SS V CC LO *Bootstrap diode is monolithically integrated This diagram shows electrical connections only. Please refer to our application notes and design tips for proper circuit board layout. Figure 1 Typical application block diagram Datasheet 2 of 25 V 2.1 www.infineon.com/soi 2020-12-07