PD- 90338F IRF250 JANTX2N6766 JANTXV2N6766 REPETITIVE AVALANCHE AND dv/dt RATED 200V, N-CHANNEL REF: MIL-PRF-19500/543 HEXFET TRANSISTORS THRU-HOLE -TO-3 (TO-204AE) Product Summary Part Number BV RDS(on) I DSS D IRF250 200V 30A 0.085 TO-3 (TO-204AE) Description Features HEXFET MOSFET technology is the key to IR Hirel advanced Repetitive Avalanche Ratings line of power MOSFET transistors. The efficient geometry and Dynamic dv/dt Rating unique processing of this latest State of the Art design Hermetically Sealed achieves: very low on-state resistance combined with high trans Simple Drive Requirements conductance superior reverse energy and diode recovery dv/dt ESD Rating: Class 3A per MIL-STD-750, capability. Method 1020 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. Absolute Maximum Ratings Symbol Value Parameter Units I V = 10V, T = 25C Continuous Drain Current 30 D1 GS C A I V = 10V, T = 100C Continuous Drain Current 19 D2 GS C I T = 25C Pulsed Drain Current 120 DM C P T = 25C Maximum Power Dissipation 150 W D C Linear Derating Factor 1.2 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 500 mJ AS I Avalanche Current 30 A AR E Repetitive Avalanche Energy 15 mJ AR dv/dt Peak Diode Recovery 5.0 V/ns T Operating Junction and J -55 to + 150 T Storage Temperature Range C STG Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) g Weight 11.5 (Typical) For footnotes refer to the page 2. 1 2019-07-01 International Rectifier HiRel Products, Inc. IRF250 JANTX2N6766/JANTXV2N6766 Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max. Units Test Conditions BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 1.0mA DSS GS D BV /T DSS J Breakdown Voltage Temp. Coefficient 0.29 V/C Reference to 25C, I = 1.0mA D 0.085 V = 10V, I = 19A GS D2 R Static Drain-to-Source On-Resistance DS(on) 0.090 V = 10V, I = 30A GS D1 V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D I 25 V = 160V, V = 0V DSS DS GS Zero Gate Voltage Drain Current A 250 V = 160V,V = 0V,T =125C DS GS J I = 20V Gate-to-Source Leakage Forward 100 V GSS GS nA Gate-to-Source Leakage Reverse -100 V = -20V GS Q Total Gate Charge 55 115 I = 30A G D1 Q Gate-to-Source Charge 8 22 nC V = 100V GS DS Q Gate-to-Drain (Miller) Charge 30 60 V = 10V GD GS t Turn-On Delay Time 35 V = 100V d(on) DD tr Rise Time 190 I = 30A D1 ns t Turn-Off Delay Time 170 R = 2.35 d(off) G V = 10V t Fall Time 130 f GS Measured from Drain lead (6mm / 0.25 in from package) to Source Ls +L Total Inductance 6.1 nH D lead (6mm/ 0.25 in from package) C Input Capacitance 3500 V = 0V iss GS C Output Capacitance 700 pF V = 25V oss DS = 1.0MHz C Reverse Transfer Capacitance 110 rss Source-Drain Diode Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Test Conditions I Continuous Source Current (Body Diode) 30 S A I Pulsed Source Current (Body Diode) 120 SM V Diode Forward Voltage 1.9 V T = 25C,I = 30A, V = 0V SD J S GS t Reverse Recovery Time 950 ns T = 25C ,I = 30A,V 30V rr J F DD Q Reverse Recovery Charge 9.0 C di/dt = 100A/s rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Thermal Resistance Symbol Parameter Min. Typ. Max. Units Junction-to-Case R JC 0.83 C/W R Junction-to-Ambient (Typical socket mount) 30 JA Footnotes: Repetitive Rating Pulse width limited by maximum junction temperature. V = 50V, starting T = 25C, L= 1.11mH, Peak I = 30A,V = 10V. DD J L GS I 30A, di/dt 190A/s, V 200V, T 150C.Suggested RG = 2.35 SD DD J Pulse width 300 s Duty Cycle 2% 2 2019-07-01 International Rectifier HiRel Products, Inc.