BAS3005B.... Medium Power AF Schottky Diode Forward current: 0.5 A Reverse voltage: 30 V Low capacitance, low reverse current For high efficiency DC/DC conversion, fast switching, protecting and clamping applications Pb-free (RoHS compliant) package Qualified according AEC Q101 BAS3005B-02LRH* BAS3005B-02V Type Package Configuration Marking BAS3005B-02LRH* TSLP-2-17 single, leadless 5B BAS3005B-02V SC79 single 3 *Preliminary Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 1) 30 V Diode reverse voltage V R - RMS reverse voltage V R(RMS) 1) 500 mA Forward current I F 500 Average rectified forward current (50/60Hz, sinus) I FAV A Repetitive peak forward current I 3.5 FRM (t 1 ms, D 0.25) p Non-repetitive peak surge forward current I 5 FSM (t 10ms) 150 C Junction temperature T j Operating temperature range T -55 ...125 op Storage temperature T -65 ...150 stg 2012-07-02 1BAS3005B.... 1 For T > 25C the derating of V and I has to be considered. Please refer to the attached curves. A R F Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 80 thJS 1 For calculation of R please refer to Application Note Thermal Resistance thJA Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 1) Reverse current I A R V = 5 V - 1 5 R V = 10 V - 2 10 R V = 30 V - 5 25 R 1) mV Forward voltage V F I = 1 mA - 200 250 F I = 10 mA - 260 310 F I = 100 mA - 360 410 F I = 200 mA - 410 470 F I = 500 mA - 550 620 F AC Characteristics - 6 10 pF Diode capacitance C T V = 5 V, f = 1 MHz R 1 Pulsed test: t = 300 s D = 0.01 p 2012-07-02 2