BCV61BE6327HTSA1 Infineon

BCV61BE6327HTSA1 electronic component of Infineon
BCV61BE6327HTSA1 Infineon
BCV61BE6327HTSA1 Darlington Transistors
BCV61BE6327HTSA1  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BCV61BE6327HTSA1 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. BCV61BE6327HTSA1 Darlington Transistors are a product manufactured by Infineon. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

Part No. BCV61BE6327HTSA1
Manufacturer: Infineon
Category: Darlington Transistors
Description: Darlington Transistors AF TRANSISTORS
Datasheet: BCV61BE6327HTSA1 Datasheet (PDF)
Price (USD)
6000: USD 0.0807 ea
Line Total: USD 484.2 
Availability : 43650
  
Ship by Thu. 28 Aug to Wed. 03 Sep
QtyUnit Price
6000$ 0.0807
9000$ 0.0755
12000$ 0.075
15000$ 0.0733

Availability 43650
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0807
9000$ 0.0755
12000$ 0.075
15000$ 0.0733


Availability 5820
Ship by Thu. 28 Aug to Wed. 03 Sep
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.5576
9000$ 0.2601

   
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We are delighted to provide the BCV61BE6327HTSA1 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCV61BE6327HTSA1 and other electronic components in the Darlington Transistors category and beyond.

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BCV61 NPN Silicon Double Transistor To be used as a current mirror 3 Good thermal coupling and V matching BE 2 4 High current gain 1 Low collector-emitter saturation voltage Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) C2 (1) Tr.1 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration Package BCV61B 1Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 BCV61C 1Ls 1 = C2 2 = C1 3 = E1 4 = E2 SOT143 Maximum Ratings Parameter Symbol Value Unit 30 V Collector-emitter voltage V CEO (transistor T1) 30 Collector-base voltage (open emitter) V CBO (transistor T1) 6 Emitter-base voltage V EBS 100 mA DC collector current I C 200 Peak collector current, t < 10 ms I p CM 200 Base peak current (transistor T1) I BM 300 mW Total power dissipation, T = 99 C P S tot 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance 1) Junction - soldering point R 170 K/W thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 2011-10-13 1BCV61 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics of T1 30 - - V Collector-emitter breakdown voltage V (BR)CEO I = 10 mA, I = 0 C B 30 - - Collector-base breakdown voltage V (BR)CBO I = 10 A, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 10 A, I = 0 E C - - 15 nA Collector cutoff current I CBO V = 30 V, I = 0 CB E - - 5 A Collector cutoff current I CBO V = 30 V, I = 0 , T = 150 C CB E A 1) 100 - - DC current gain h - FE I = 0.1 mA, V = 5 V C CE 1) DC current gain h FE I = 2 mA, V = 5 V, BCV61B 200 290 450 C CE I = 2 mA, V = 5 V, BCV61C 420 520 800 C CE 1) mV Collector-emitter saturation voltage V CEsat I = 10 mA, I = 0.5 mA - 90 250 C B I = 100 mA, I = 5 mA - 200 600 C B 1) Base-emitter saturation voltage V BEsat I = 10 mA, I = 0.5 mA - 700 - C B I = 100 mA, I = 5 mA - 900 - C B 1) Base-emitter voltage V BE(ON) I = 2 mA, V = 5 V 580 660 700 C CE I = 10 mA, V = 5 V - - 770 C CE 1 Puls test: t 300 s, D = 2% 2011-10-13 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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