Technische Information / Technical Information IGBT-Module BSM10GP120 IGBT-Modules Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rckw. Spitzensperrspannung V 1600 V RRM repetitive peak reverse voltage Durchlastrom Grenzeffektivwert I 40 A FRMSM RMS forward current per chip Dauergleichstrom T = 80C I 10 A C d DC forward current t = 10 ms, T = 25C I Stostrom Grenzwert 300 A P vj FSM surge forward current t = 10 ms, T = 150C 230 A P vj 2 2 Grenzlastintegral t = 10 ms, T = 25C 450 P vj I t A s 2 2 t = 10 ms, T = 150C 260 I t - value P vj A s Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung V CES 1200 V collector-emitter voltage Tc = 80 C I 10 A Kollektor-Dauergleichstrom C,nom. DC-collector current T = 25 C I 20 A C C Periodischer Kollektor Spitzenstrom t = 1 ms, T = 80 C I 20 A P C CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P 100 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom I Tc = 80 C 10 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 20 A P FRM repetitive peak forw. current Grenzlastintegral 2 2 V = 0V, t = 10ms, T = 125C I t 18 A s 2 R p vj I t - value Transistor Brems-Chopper/ Transistor Brake-Chopper Kollektor-Emitter-Sperrspannung V 1200 V CES collector-emitter voltage T = 80 C I Kollektor-Dauergleichstrom 10 A C C,nom. DC-collector current T = 25 C I 20 A C C Periodischer Kollektor Spitzenstrom t = 1 ms, T = 80C I 20 A P C CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C P 100 W C tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Diode Brems-Chopper/ Diode Brake-Chopper Dauergleichstrom I Tc = 80 C 10 A F DC forward current Periodischer Spitzenstrom t = 1 ms I 20 A P FRM repetitive peak forw. current prepared by: Andreas Schulz date of publication:17.09.1999 approved by: M.Hierholzer revision: 5 1(11) DB-PIM-9.xlsTechnische Information / Technical Information IGBT-Module BSM10GP120 IGBT-Modules Modul Isolation/ Module Isolation Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min. V 2,5 kV ISOL insulation test voltage NTC connected to Baseplate Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. typ. max. Diode Gleichrichter/ Diode Rectifier Durchlaspannung T = 150C, I = 10 A V - 0,9 0,95 V vj F F forward voltage Schleusenspannung T = 150C V - - 0,8 V vj (TO) threshold voltage Ersatzwiderstand T = 150C r - - 10,5 m vj T slope resistance Sperrstrom T = 150C, V = 1600 V I -2 - mA vj R R reverse current Modul Leitungswiderstand, Anschlsse-Chip T = 25C R - 8 - m C AA+CC lead resistance, terminals-chip min. typ. max. Transistor Wechselrichter/ Transistor Inverter V = 15V, T = 25C, I = 10 A V - 2,4 2,85 V Kollektor-Emitter Sttigungsspannung GE vj C CE sat collector-emitter saturation voltage V = 15V, T = 125C, I = 10 A - 2,75 - V GE vj C Gate-Schwellenspannung V = V , T = 25C, I = 0,35 mA V 4,5 5,5 6,5 V CE GE vj C GE(TO) gate threshold voltage f = 1MHz, T = 25C Eingangskapazitt vj C - 0,6 - nF ies input capacitance V = 25 V, V = 0 V CE GE Kollektor-Emitter Reststrom V = 0V, T = 25C, V = 1200 V I - 0,5 500 A GE vj CE CES collector-emitter cut-off current V = 0V, T =125C, V = 1200 V - 0,8 - mA GE vj CE Gate-Emitter Reststrom V = 0V, V =20V, T =25C I - - 300 nA CE GE vj GES gate-emitter leakage current I = I , V = Einschaltverzgerungszeit (ind. Last) C Nenn CC 600 V turn on delay time (inductive load) V = 15V, T = 25C, R = 82 Ohm t -40 - ns GE vj G d,on V = 15V, T = 125C, R = 82 Ohm - 45 - ns GE vj G I = I , V = Anstiegszeit (induktive Last) 600 V C Nenn CC rise time (inductive load) V = 15V, T = 25C, R = t 82 Ohm -45 - ns GE vj G r V = 15V, T = 125C, R = 82 Ohm - 40 - ns GE vj G Abschaltverzgerungszeit (ind. Last) I = I , V = 600 V C Nenn CC turn off delay time (inductive load) V = 15V, T = 25C, R = t 82 Ohm - 255 - ns GE vj G d,off V = 15V, T = 125C, R = 82 Ohm - 285 - ns GE vj G I = I , V = 600 V Fallzeit (induktive Last) C Nenn CC fall time (inductive load) V = 15V, T = 25C, R = 82 Ohm t -40 - ns GE vj G f V = 15V, T = 125C, R = 82 Ohm - 60 - ns GE vj G I = I , V = Einschaltverlustenergie pro Puls 600 V C Nenn CC turn-on energy loss per pulse V = 15V, T = 125C, R = 82 Ohm E - 1,2 - mWs GE vj G on L = 75 nH S I = I , V = Abschaltverlustenergie pro Puls 600 V C Nenn CC turn-off energy loss per pulse V = 15V, T = 125C, R = E 82 Ohm - 1,1 - mWs GE vj G off L = 75 nH S Kurzschluverhalten t 10s, V 15V, R = 82 Ohm P GE G SC Data I T 125C, V = 720 V -45 - A vj CC SC dI/dt = 800 A/s 2(11) DB-PIM-9.xls