Technische Information / Technical Information IGBT-Module BSM 200 GB 60 DLC IGBT-Modules Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung V 600 V CES collector-emitter voltage T = 50C I 200 A c C,nom. Kollektor-Dauergleichstrom DC-collector current T = 25C I 230 A c C Periodischer Kollektor Spitzenstrom t = 1ms, T = 50C I 400 A P c CRM repetitive peak collector current Gesamt-Verlustleistung T = 25C, Transistor P 730 W c tot total power dissipation Gate-Emitter-Spitzenspannung V +/- 20V V GES gate-emitter peak voltage Dauergleichstrom I 200 A F DC forward current Periodischer Spitzenstrom t = 1ms I 400 A P FRM repetitive peak forw. current Grenzlastintegral der Diode 2 2 V = 0V, t = 10ms, T = 125C 4.050 R p vj I t A s 2 I t - value, Diode Isolations-Prfspannung RMS, f= 50Hz, t= 1min. V 2,5 kV ISOL insulation test voltage Charakteristische Werte / Characteristic values min. typ. max. Transistor / Transistor I = 200A, V = 15V, T = 25C - 1,95 2,45 V Kollektor-Emitter Sttigungsspannung C GE vj V CE sat collector-emitter saturation voltage I = 200A, V = 15V, T = 125C - 2,20 - V C GE vj Gate-Schwellenspannung I = 4,0mA, V = V , T = 25C V 4,5 5,5 6,5 V C CE GE vj GE(th) gate threshold voltage Eingangskapazitt f= 1MHz, T = 25C, V = 25V, V = 0V C -9 - nF vj CE GE ies input capacitance Rckwirkungskapazitt f= 1MHz, T = 25C, V = 25V, V = 0V C - 0,8 - nF vj CE GE res reverse transfer capacitance V = 600V, V = 0V, T = 25C - 1 500 A CE GE vj Kollektor-Emitter Reststrom I CES collector-emitter cut-off current V = 600V, V = 0V, T = 125C -1 - mA CE GE vj Gate-Emitter Reststrom V = 0V, V = 20V, T = 25C I - - 400 nA CE GE vj GES gate-emitter leakage current prepared by: Andreas Vetter date of publication: 2000-04-26 approved by: Michael Hornkamp revision: 1 BSM 200 GB 60 DLC 1 (8) 2000-02-08Technische Information / Technical Information IGBT-Module BSM 200 GB 60 DLC IGBT-Modules Charakteristische Werte / Characteristic values min. typ. max. Transistor / Transistor I = 200A, V = 300V C CC Einschaltverzgerungszeit (ind. Last) V = 15V, R = 1,5 , T = 25C t - 163 - ns GE G vj d,on turn on delay time (inductive load) V = 15V, R = 1,5 , T = 125C - 180 - ns GE G vj I = 200A, V = 300V C CC Anstiegszeit (induktive Last) V = 15V, R = 1,5 , T = 25C t -43 - ns GE G vj r rise time (inductive load) V = 15V, R = 1,5 , T = 125C -49 - ns GE G vj I = 200A, V = 300V C CC Abschaltverzgerungszeit (ind. Last) V = 15V, R = 1,5 , T = 25C t - 253 - ns GE G vj d,off turn off delay time (inductive load) V = 15V, R = 1,5 , T = 125C - 285 - ns GE G vj I = 200A, V = 300V C CC Fallzeit (induktive Last) V = 15V, R = 1,5 , T = 25C t -33 - ns GE G vj f fall time (inductive load) V = 15V, R = 1,5 , T = 125C -41 - ns GE G vj I = 200A, V = 300V, V = 15V C CC GE Einschaltverlustenergie pro Puls E - 4,6 - mJ on turn-on energy loss per pulse R = 1,5 , T = 125C, L = 15nH G vj I = 200A, V = 300V, V = 15V C CC GE Abschaltverlustenergie pro Puls E - 6,3 - mJ off turn-off energy loss per pulse R = 1,5 , T = 125C, L = 15nH G vj t 10sec, V 15V P GE Kurzschluverhalten I SC - 900 - A SC Data T 125C, V =360V, V = V -L di/dt vj CC CEmax CES CE Modulinduktivitt L - 40 - nH CE stray inductance module Modul-Leitungswiderstand, Anschlsse - Chip T = 25C R - 0,9 - m c CC +EE lead resistance, terminals - chip Charakteristische Werte / Characteristic values min. typ. max. Diode / Diode I = 200A, V = 0V, T = 25C - 1,25 1,6 V F GE vj Durchlaspannung V F forward voltage I = 200A, V = 0V, T = 125C F GE vj - 1,20 - V I = 200A, -di /dt= 4000A/sec F F Rckstromspitze V = 300V, V = -10V, T = 25C I - 154 - A R GE vj RM peak reverse recovery current V = 300V, V = -10V, T = 125C - 188 - A R GE vj I = 200A, -di /dt= 4000A/sec F F Sperrverzgerungsladung V = 300V, V = -10V, T = 25C Q - 12,1 - C R GE vj r recoverred charge V = 300V, V = -10V, T = 125C - 19,7 - C R GE vj I = 200A, -di /dt= 4000A/sec F F Abschaltenergie pro Puls V = 300V, V = -10V, T = 25C E --- mJ R GE vj rec reverse recovery energy V = 300V, V = -10V, T = 125C - 4,1 - mJ R GE vj BSM 200 GB 60 DLC 2 (8) 2000-02-08