BSM 50 GB 170 DN2 IGBT Power Module Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate R = 27 Ohm G on,min Type V I Package Ordering Code CE C BSM 50 GB 170 DN2 1700V 72A HALF-BRIDGE 1 C67070-A2701-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V 1700 V CE Collector-gate voltage V CGR R = 20 k 1700 GE Gate-emitter voltage V 20 GE DC collector current I A C T = 25 C 72 C T = 80 C 50 C Pulsed collector current, t = 1 ms I p Cpuls T = 25 C 144 C T = 80 C 100 C Power dissipation per IGBT P W tot T = 25 C 500 C Chip temperature T + 150 C j Storage temperature T -40 ... + 125 stg Thermal resistance, chip case R 0.25 K/W thJC Diode thermal resistance, chip case R 0.75 thJC D Insulation test voltage, t = 1min. V 4000 Vac is Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56 1 Oct-27-1997BSM 50 GB 170 DN2 Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage V V GE(th) V = V I = 4 mA 4.8 5.5 6.2 GE CE, C Collector-emitter saturation voltage V CE(sat) V = 15 V, I = 50 A, T = 25 C - 3.4 3.9 GE C j V = 15 V, I = 50 A, T = 125 C - 4.6 5.3 GE C j Zero gate voltage collector current I mA CES V = 1700 V, V = 0 V, T = 25 C - 0.4 0.5 CE GE j V = 1700 V, V = 0 V, T = 125 C - 1.6 - CE GE j Gate-emitter leakage current I nA GES V = 20 V, V = 0 V - - 320 GE CE AC Characteristics Transconductance g S fs V = 20 V, I = 50 A 18 - - CE C Input capacitance C nF iss V = 25 V, V = 0 V, f = 1 MHz - 8 - CE GE Output capacitance C oss V = 25 V, V = 0 V, f = 1 MHz - 0.64 - CE GE Reverse transfer capacitance C rss V = 25 V, V = 0 V, f = 1 MHz - 0.25 - CE GE 2 Oct-27-1997