PROFET BTS 432 E2 Smart Highside Power Switch Product Summary Features 1 ) V 80 V Load dump and reverse battery protection Load dump Clamp of negative voltage at output V -V Avalanche Clamp 58 V bb OUT Short-circuit protection V 4.5 ... 42 V bb (operation) Current limitation V -32 V bb (reverse) Thermal shutdown R 38 m ON Diagnostic feedback I 44 A L(SCp) Open load detection in ON-state I 35 A L(SCr) CMOS compatible input I 11 A Electrostatic discharge (ESD) protection L(ISO) 2) Loss of ground and loss of V protection bb PG-TO220-5-11 PG-TO263-5-2 Overvoltage protection Undervoltage and overvoltage shutdown with auto- 5 restart and hysteresis Green Product (RoHS compliant) 5 1 AEC qualified Standard SMD Application C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads All types of resistive, inductive and capacitve loads Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions. R + V bb bb 3 Voltage Gate Overvoltage Current source protection limit protection V Logic OUT Limit for Voltage Charge pump unclamped 5 sensor Level shifter Temperature ind. loads sensor Rectifier IN 2 Open load Load Logic ESD detection 4 ST Short circuit detection GND PROFET 1 Load GND Signal GND 1) No external components required, reverse load current limited by connected load. 2) Additional external diode required for charged inductive loads Data Sheet 1 of 14 2010-Jan-26 PROFET BTS 432 E2 Pin Symbol Function 1 GND Logic ground 2 IN Input, activates the power switch in case of logical high signal 3 V Positive power supply voltage, bb the tab is shorted to this pin 4 ST Diagnostic feedback, low on failure 5 OUT Output to the load (Load, L) Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Values Unit Supply voltage (overvoltage protection see page 3) V 63V bb 3) Load dump protection V = U + V , U = 13.5 V V 66.5 V LoadDump A s A s R = 2 , R = 1.1 , t = 200 ms, IN= low or high I L d Load current (Short-circuit current, see page 4) I self-limitedA L Operating temperature range T -40 ...+150 C j -55 ...+150 Storage temperature range T stg Power dissipation (DC) P 125W tot Inductive load switch-off energy dissipation, single pulse T=150 C: E 1.7J j AS Electrostatic discharge capability (ESD) V 2.0kV ESD (Human Body Model) Input voltage (DC) V -0.5 ... +6 V IN Current through input pin (DC) I 5.0 mA IN Current through status pin (DC) I 5.0 ST see internal circuit diagrams page 6... Thermal resistance chip - case: R 1 K/W thJC 75 junction - ambient (free air): R thJA 4) SMD version, device on pcb : typ. 33 3) V is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 S 2 4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70m thick) copper area for V bb connection. PCB is vertical without blown air. Data Sheet 2 2010-Jan-26