CY15B101N 1-Mbit (64K 16) Automotive-E F-RAM Memory 1-Mbit (64K 16) Automotive-E F-RAM Memory Automotive-E temperature: 40 C to +125 C Features 44-pin thin small outline package (TSOP) Type II 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64K 16 Restriction of hazardous substances (RoHS)-compliant Configurable as 128K 8 using UB and LB 13 Functional Description High-endurance 10 trillion (10 ) read/writes 121-year data retention (see the Data Retention and The CY15B101N is a 64K 16 nonvolatile memory that reads Endurance table) and writes similar to a standard SRAM. A ferroelectric random NoDelay writes access memory or F-RAM is nonvolatile, which means that data Page-mode operation for 30 ns cycle time is retained after power is removed. It provides data retention for Advanced high-reliability ferroelectric process over 121 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of SRAM compatible battery-backed SRAM (BBSRAM). Fast write-timing and high Industry-standard 64K 16 SRAM pinout write-endurance make the F-RAM superior to other types of 60 ns access time, 90 ns cycle time memory. Superior to battery-backed SRAM modules The CY15B101N operation is similar to that of other RAM No battery concerns devices, and, therefore, it can be used as a drop-in replacement Monolithic reliability for a standard SRAM in a system. Read cycles may be triggered True surface-mount solution, no rework steps by CE or simply by changing the address and write cycles may Superior for moisture, shock, and vibration be triggered by CE or WE. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features Low power consumption make the CY15B101N ideal for nonvolatile memory applications Active current 7 mA (typ) requiring frequent or rapid writes. Standby current 120 A (typ) The device is available in a 400-mil, 44-pin TSOP-II Low-voltage operation: V = 2.0 V to 3.6 V surface-mount package. Device specifications are guaranteed DD over the Automotive-E temperature range 40 C to +125 C. Logic Block Diagram 64K x 16 block A 15-2 A F-RAM Array 15-0 A 1-0 . CE Column Decoder WE DQ 15-0 Control I/O Latch & Bus Driver UB, LB Logic OE ZZ Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-10175 Rev. *A Revised January 4, 2017 Address Latch & Write Protect Block & Row Decoder .CY15B101N Contents Pinout ................................................................................3 AC Switching Characteristics ......................................... 9 Pin Definitions ..................................................................3 SRAM Read Cycle ...................................................... 9 Device Operation ..............................................................4 SRAM Write Cycle ..................................................... 10 Memory Operation .......................................................4 Power Cycle and Sleep Mode Timing ........................... 14 Read Operation ...........................................................4 Functional Truth Table ................................................... 15 Write Operation ...........................................................4 Byte Select Truth Table .................................................. 15 Page Mode Operation .................................................4 Ordering Information ...................................................... 16 Precharge Operation ...................................................4 Ordering Code Definitions ......................................... 16 Sleep Mode .................................................................5 Package Diagram ............................................................ 17 SRAM Drop-In Replacement .......................................5 Acronyms ........................................................................18 Endurance ...................................................................5 Document Conventions ................................................. 18 Maximum Ratings .............................................................6 Units of Measure ....................................................... 18 Operating Range ...............................................................6 Document History Page ................................................. 19 DC Electrical Characteristics ..........................................6 Sales, Solutions, and Legal Information ...................... 20 Data Retention and Endurance .......................................7 Worldwide Sales and Design Support ....................... 20 Example of an F-RAM Life Time Products ....................................................................20 in an AEC-Q100 Automotive Application .......................7 PSoC Solutions ...................................................... 20 Capacitance ......................................................................8 Cypress Developer Community ................................. 20 Thermal Resistance ..........................................................8 Technical Support ..................................................... 20 AC Test Conditions ..........................................................8 Document Number: 002-10175 Rev. *A Page 2 of 20