CY15B102N 2-Mbit (128K 16) Automotive F-RAM Memory 2-Mbit (128K 16) Automotive F-RAM Memory Automotive-A temperature: 40 C to +85 C Features 44-pin thin small outline package (TSOP) Type II 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K 16 Restriction of hazardous substances (RoHS)-compliant Configurable as 256K 8 using UB and LB 14 Functional Description High-endurance 100 trillion (10 ) read/writes 151-year data retention (see the Data Retention and The CY15B102N is a 128K 16 nonvolatile memory that reads Endurance table) and writes similar to a standard SRAM. A ferroelectric random NoDelay writes access memory or F-RAM is nonvolatile, which means that data Page-mode operation for 30-ns cycle time is retained after power is removed. It provides data retention for Advanced high-reliability ferroelectric process over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of SRAM compatible battery-backed SRAM (BBSRAM). Fast write-timing and high Industry-standard 128K 16 SRAM pinout write-endurance make the F-RAM superior to other types of 60-ns access time, 90-ns cycle time memory. Advanced features The CY15B102N operation is similar to that of other RAM Software-programmable block write-protect devices, and, therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read cycles may be triggered Superior to battery-backed SRAM modules by CE or simply by changing the address and write cycles may No battery concerns be triggered by CE or WE. The F-RAM memory is nonvolatile Monolithic reliability due to its unique ferroelectric memory process. These features True surface-mount solution, no rework steps make the CY15B102N ideal for nonvolatile memory applications Superior for moisture, shock, and vibration requiring frequent or rapid writes. Low power consumption The device is available in a 400-mil, 44-pin TSOP-II Active current 7 mA (typ) surface-mount package. Device specifications are guaranteed Standby current 120 A (typ) over the Automotive-A temperature range 40 C to +85 C. For a complete list of related resources, click here. Low-voltage operation: V = 2.0 V to 3.6 V DD Logic Block Diagram 16 K x 16 block 16 K x 16 block 16 K x 16 block 16 K x 16 block A 16-2 A 16-0 16 K x 16 block 16 K x 16 block A 1-0 16 K x 16 block 16 K x 16 block . CE Column Decoder WE DQ 15-0 Control I/O Latch & Bus Driver UB, LB Logic OE ZZ Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-93140 Rev. *D Revised November 23, 2017 Address Latch & Write Protect Block & Row Decoder .CY15B102N Contents Pinout ................................................................................3 AC Switching Characteristics ....................................... 11 Pin Definitions ..................................................................3 SRAM Read Cycle .................................................... 11 Device Operation ..............................................................4 SRAM Write Cycle ..................................................... 12 Memory Operation .......................................................4 Power Cycle and Sleep Mode Timing ........................... 16 Read Operation ...........................................................4 Functional Truth Table ................................................... 17 Write Operation ...........................................................4 Byte Select Truth Table .................................................. 17 Page Mode Operation .................................................4 Ordering Information ...................................................... 18 Precharge Operation ...................................................4 Ordering Code Definitions ......................................... 18 Sleep Mode .................................................................4 Package Diagram ............................................................ 19 Software Write Protect ................................................5 Acronyms ........................................................................20 Software Write-Protect Timing ....................................7 Document Conventions ................................................. 20 SRAM Drop-In Replacement .......................................8 Units of Measure ....................................................... 20 Endurance ...................................................................8 Document History Page ................................................. 21 Maximum Ratings .............................................................9 Sales, Solutions, and Legal Information ...................... 22 Operating Range ...............................................................9 Worldwide Sales and Design Support ....................... 22 DC Electrical Characteristics ..........................................9 Products ....................................................................22 Data Retention and Endurance .....................................10 PSoC Solutions ...................................................... 22 Capacitance ....................................................................10 Cypress Developer Community ................................. 22 Thermal Resistance ........................................................10 Technical Support ..................................................... 22 AC Test Conditions ........................................................10 Document Number: 001-93140 Rev. *D Page 2 of 22