Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comCY15B102N 2-Mbit (128K 16) Automotive-E F-RAM 2-Mbit (128K 16) Automotive-E F-RAM Automotive-E temperature: 40 C to +125 C Features 44-pin thin small outline package (TSOP) Type II 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K 16 Restriction of hazardous substances (RoHS)-compliant Configurable as 256K 8 using UB and LB 13 Functional Description High-endurance 10 trillion (10 ) read/writes 121-year data retention (see Data Retention and Endurance The CY15B102N is a 128K 16 nonvolatile memory that reads on page 10) and writes similar to a standard SRAM. A ferroelectric random NoDelay writes access memory or F-RAM is nonvolatile, which means that data Page-mode operation for 30 ns cycle time is retained after power is removed. It provides data retention for Advanced high-reliability ferroelectric process over 121 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of SRAM compatible battery-backed SRAM (BBSRAM). Fast write-timing and high Industry-standard 128K 16 SRAM pinout write-endurance make the F-RAM superior to other types of 60 ns access time, 90 ns cycle time memory. Advanced features The CY15B102N operation is similar to that of other RAM Software-programmable block write-protect devices, and, therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read cycles may be triggered Superior to battery-backed SRAM modules by CE or simply by changing the address and write cycles may No battery concerns be triggered by CE or WE. The F-RAM memory is nonvolatile Monolithic reliability due to its unique ferroelectric memory process. These features True surface-mount solution, no rework steps make the CY15B102N ideal for nonvolatile memory applications Superior for moisture, shock, and vibration requiring frequent or rapid writes. Low power consumption The device is available in a 400-mil, 44-pin TSOP-II Active current 7 mA (typ) surface-mount package. Device specifications are guaranteed Standby current 120 A (typ) over the Automotive-E temperature range 40 C to +125 C. Low-voltage operation: V = 2.0 V to 3.6 V DD Logic Block Diagram 16K x 16 block 16K x 16 block 16K x 16 block 16K x 16 block A 16-2 A 16-0 16K x 16 block 16K x 16 block A 1-0 16K x 16 block 16K x 16 block . CE Column Decoder WE DQ 15-0 Control I/O Latch & Bus Driver UB, LB Logic OE ZZ Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-10177 Rev. *B Revised November 21, 2018 Address Latch & Write Protect Block & Row Decoder .