Product Information

CY15B102Q-SXM

CY15B102Q-SXM electronic component of Infineon

Datasheet
F-RAM F-RAM Memory Serial

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

470: USD 70.9477 ea
Line Total: USD 33345.42

0 - Global Stock
MOQ: 470  Multiples: 470
Pack Size: 470
Availability Price Quantity
0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 470
Multiples : 470

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CY15B102Q-SXM
Infineon

470 : USD 57.5

     
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CY15B102Q Military, 2-Mbit (256K 8) Serial (SPI) F-RAM Military, 2-Mbit (256K 8) Serial (SPI) F-RAM Features Functional Description 2-Mbit ferroelectric random access memory (F-RAM) logically The CY15B102Q is a 2-Mbit nonvolatile memory employing an organized as 256K 8 advanced ferroelectric process. F-RAM is nonvolatile and 13 High-endurance 10 trillion (10 ) read/writes performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, 121-year data retention (See Data Retention and Endurance on page 14) overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. NoDelay writes Advanced high-reliability ferroelectric process Unlike serial flash and EEPROM, the CY15B102Q performs write operations at bus speed. No write delays are incurred. Data Very fast serial peripheral interface (SPI) is written to the memory array immediately after each byte is Up to 25 MHz frequency successfully transferred to the device. The next bus cycle can Direct hardware replacement for serial flash and EEPROM commence without the need for data polling. In addition, the Supports SPI mode 0 (0, 0) and mode 3 (1, 1) product offers substantial write endurance compared with other Sophisticated write protection scheme nonvolatile memories. The CY15B102Q is capable of supporting 13 Hardware protection using the Write Protect (WP) pin 10 read/write cycles, or 10 million times more write cycles than EEPROM. Software protection using Write Disable instruction Software block protection for 1/4, 1/2, or entire array These capabilities make the CY15B102Q ideal for nonvolatile memory applications requiring frequent or rapid writes. Device ID Examples range from data collection, where the number of write Manufacturer ID and Product ID cycles may be critical, to demanding industrial controls where the Low power consumption long write time of serial flash or EEPROM can cause data loss. 5 mA active current at 25 MHz The CY15B102Q provides substantial benefits to users of serial 750 A standby current EEPROM or flash as a hardware drop-in replacement. The 20 A sleep mode current CY15B102Q uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device Low-voltage operation: V = 2.0 V to 3.6 V DD incorporates a read-only Device ID that allows the host to Military temperature: 55 C to +125 C determine the manufacturer, product density, and product revision. The device specifications are guaranteed over the 8-pin small outline integrated circuit (SOIC) package Military temperature range of 55 C to +125 C. AEC Q006 compliant Restriction of hazardous substances (RoHS) compliant Logic Block Diagram WP Instruction Decoder CS Clock Generator Control Logic HOLD Write Protect SCK 256 K x 8 F-RAM Array Instruction Register 18 8 Address Register Counter SI SO Data OI/ Register 3 Nonvolatile Status Register Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-19129 Rev. *A Revised November 26, 2018CY15B102Q Contents Pinout ................................................................................3 Operating Range ............................................................. 13 Pin Definitions ..................................................................3 DC Electrical Characteristics ........................................ 13 Functional Overview ........................................................4 Data Retention and Endurance ..................................... 14 Memory Architecture ........................................................4 Capacitance .................................................................... 14 Serial Peripheral Interface - SPI Bus ..............................4 Thermal Resistance ........................................................ 14 SPI Overview ...............................................................4 AC Test Conditions ........................................................ 14 SPI Modes ...................................................................5 AC Switching Characteristics ....................................... 15 Power Up to First Access ............................................6 Power Cycle Timing ....................................................... 17 Command Structure ....................................................6 Ordering Information ...................................................... 18 WREN - Set Write Enable Latch .................................6 Ordering Code Definitions ......................................... 18 WRDI - Reset Write Enable Latch ...............................6 Package Diagrams .......................................................... 19 Status Register and Write Protection .............................7 Acronyms ........................................................................ 20 RDSR - Read Status Register .....................................8 Document Conventions ................................................. 20 WRSR - Write Status Register ....................................8 Units of Measure ....................................................... 20 Memory Operation ............................................................9 Document History Page ................................................. 21 Write Operation ...........................................................9 Sales, Solutions, and Legal Information ...................... 22 Read Operation ...........................................................9 Worldwide Sales and Design Support ....................... 22 Fast Read Operation .................................................10 Products .................................................................... 22 HOLD Pin Operation .................................................10 PSoC Solutions ...................................................... 22 Sleep Mode ...............................................................11 Cypress Developer Community ................................. 22 Device ID ...................................................................12 Technical Support ..................................................... 22 Endurance .................................................................12 Maximum Ratings ...........................................................13 Document Number: 002-19129 Rev. *A Page 2 of 22

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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