Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comCY15B128J 2 128-Kbit (16K 8) Automotive Serial (I C) F-RAM 128-Kbit (16K 8) Automotive Serial (I2C) F-RAM Features Functional Description The CY15B128J is a 128-Kbit nonvolatile memory employing an 128-Kbit ferroelectric random access memory (F-RAM) advanced ferroelectric process. An F-RAM is nonvolatile and logically organized as 16K 8 14 performs reads and writes similar to a RAM. It provides reliable High-endurance 100 trillion (10 ) read/writes data retention for 151 years while eliminating the complexities, 151-year data retention (See Data Retention and Endurance overhead, and system-level reliability problems caused by on page 12) EEPROM and other nonvolatile memories. NoDelay writes Unlike EEPROM, the CY15B128J performs write operations at Advanced high-reliability ferroelectric process bus speed. No write delays are incurred. Data is written to the 2 Fast two-wire serial interface (I C) memory array immediately after each byte is successfully 1 Up to 3.4 MHz frequency transferred to the device. The next bus cycle can commence Direct hardware replacement for serial EEPROM without the need for data polling. In addition, the product offers Supports legacy timings for 100 kHz and 400 kHz substantial write endurance compared with other nonvolatile memories. F-RAM also exhibits much lower power during writes Device ID than EEPROM because write operations do not require an Manufacturer ID and Product ID internally elevated power supply voltage for write circuits. The 14 Low-power consumption CY15B128J is capable of supporting 10 read/write cycles, or 175 A active current at 100 kHz 100 million times more write cycles than EEPROM. 150 A standby current These capabilities make the CY15B128J ideal for nonvolatile 8 A sleep mode current memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write Low-voltage operation: V = 2.0 V to 3.6 V DD cycles may be critical, to demanding industrial controls where the Automotive-A temperature: 40 C to +85 C long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with 8-pin small outline integrated circuit (SOIC) package less overhead for the system. Restriction of hazardous substances (RoHS) compliant The CY15B128J provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The device incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an Automotive-A temperature range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram Address 16 K x 8 Counter F-RAM Array Latch 14 8 Serial to Parallel SDA Data Latch Converter 8 8 SCL Device ID and Control Logic WP Manufacturer ID A0-A2 Note 2 1. The CY15B128J does not meet the NXP I C specification in the Fast-mode Plus (Fm+, 1 MHz) for I and in the High Speed Mode (Hs-mode, 3.4 MHz) for V . OL hys Refer to the DC Electrical Characteristics on page 11 for more details. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-90872 Rev. *J Revised December 24, 2018