X-On Electronics has gained recognition as a prominent supplier of CY15B256J-SXAT f-ram across the USA, India, Europe, Australia, and various other global locations. CY15B256J-SXAT f-ram are a product manufactured by Infineon. We provide cost-effective solutions for f-ram, ensuring timely deliveries around the world.

CY15B256J-SXAT Infineon

CY15B256J-SXAT electronic component of Infineon
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Part No.CY15B256J-SXAT
Manufacturer: Infineon
Category:F-RAM
Description: F-RAM F-RAM Memory Serial
Datasheet: CY15B256J-SXAT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 8.25 ea
Line Total: USD 20625

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 11 Jun to Thu. 13 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 7.92

     
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We are delighted to provide the CY15B256J-SXAT from our F-RAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY15B256J-SXAT and other electronic components in the F-RAM category and beyond.

CY15B256J 2 256-Kbit (32K 8) Automotive Serial (I C) F-RAM 256-Kbit (32K 8) Automotive Serial (I2C) F-RAM Features Functional Description The CY15B256J is a 256-Kbit nonvolatile memory employing an 256-Kbit ferroelectric random access memory (F-RAM) advanced ferroelectric process. An F-RAM is nonvolatile and logically organized as 32K 8 14 performs reads and writes similar to a RAM. It provides reliable High-endurance 100 trillion (10 ) read/writes data retention for 151 years while eliminating the complexities, 151-year data retention (See Data Retention and Endurance overhead, and system-level reliability problems caused by on page 13) EEPROM and other nonvolatile memories. NoDelay writes Unlike EEPROM, the CY15B256J performs write operations at Advanced high-reliability ferroelectric process bus speed. No write delays are incurred. Data is written to the 2 memory array immediately after each byte is successfully Fast two-wire serial interface (I C) 1 transferred to the device. The next bus cycle can commence Up to 3.4-MHz frequency without the need for data polling. In addition, the product offers Direct hardware replacement for serial EEPROM substantial write endurance compared with other nonvolatile Supports legacy timings for 100 kHz and 400 kHz memories. F-RAM also exhibits much lower power during writes than EEPROM because write operations do not require an Device ID internally elevated power supply voltage for write circuits. The Manufacturer ID and Product ID 14 CY15B256J is capable of supporting 10 read/write cycles, or 100 million times more write cycles than EEPROM. Low-power consumption 175 A active current at 100 kHz These capabilities make the CY15B256J ideal for nonvolatile memory applications, requiring frequent or rapid writes. 150 A standby current Examples range from data logging, where the number of write 8 A sleep mode current cycles may be critical, to demanding industrial controls where the Low-voltage operation: V = 2.0 V to 3.6 V long write time of EEPROM can cause data loss. The DD combination of features allows more frequent data writing with Automotive-A temperature: 40 C to +85 C less overhead for the system. 8-pin small outline integrated circuit (SOIC) package The CY15B256J provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The device Restriction of hazardous substances (RoHS) compliant incorporates a read-only Device ID that allows the host to determine the manufacturer, product density, and product revision. The device specifications are guaranteed over an Automotive-A temperature range of 40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram Address 32 K x 8 Counter Latch F-RAM Array 15 8 Serial to Parallel SDA Data Latch Converter 8 8 SCL Device ID and Control Logic WP Manufacturer ID A0-A2 Note 2 1. The CY15B256J does not meet the NXP I C specification in the Fast-mode Plus (Fm+, 1 MHz) for I and in the High Speed Mode (Hs-mode, 3.4 MHz) for V . OL hys Refer to DC Electrical Characteristics on page 12 for more details. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-90843 Rev. *I Revised February 28, 2018CY15B256J Contents Pinout ................................................................................3 Data Retention and Endurance ..................................... 13 Pin Definitions ..................................................................3 Capacitance .................................................................... 13 Functional Overview ........................................................4 Thermal Resistance ........................................................ 13 Memory Architecture ........................................................4 AC Test Loads and Waveforms ..................................... 13 Two-wire Interface ............................................................4 AC Test Conditions ........................................................ 13 STOP Condition (P) .....................................................5 AC Switching Characteristics ....................................... 14 START Condition (S) ...................................................5 Power Cycle Timing ....................................................... 15 Data/Address Transfer ................................................5 Ordering Information ...................................................... 16 Acknowledge/No-acknowledge ...................................6 Ordering Code Definitions ......................................... 16 High-Speed Mode (Hs-Mode) .....................................6 Package Diagram ............................................................ 17 Slave Device Address .................................................7 Acronyms ........................................................................ 18 Addressing Overview ..................................................7 Document Conventions ................................................. 18 Data Transfer ..............................................................7 Units of Measure ....................................................... 18 Memory Operation ............................................................8 Document History Page ................................................. 19 Write Operation ...........................................................8 Sales, Solutions, and Legal Information ...................... 21 Read Operation ...........................................................9 Worldwide Sales and Design Support ....................... 21 Sleep Mode ...............................................................10 Products .................................................................... 21 Device ID .........................................................................11 PSoC Solutions ...................................................... 21 Maximum Ratings ...........................................................12 Cypress Developer Community ................................. 21 Operating Range .............................................................12 Technical Support ..................................................... 21 DC Electrical Characteristics ........................................12 Document Number: 001-90843 Rev. *I Page 2 of 21

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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