Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comCY15B256J 256-Kbit (32K 8) Automotive-E Serial 2 (I C) F-RAM 256-Kbit (32K 8) Automotive-E Serial (I2C) F-RAM Features Functional Description The CY15B256J is a 256-Kbit nonvolatile memory employing an 256-Kbit ferroelectric random access memory (F-RAM) advanced ferroelectric process. An F-RAM is nonvolatile and logically organized as 32K 8 13 performs reads and writes similar to a RAM. It provides reliable High-endurance 10 trillion (10 ) read/writes data retention for 121 years while eliminating the complexities, 121-year data retention (See Data Retention and Endurance overhead, and system-level reliability problems caused by on page 12) EEPROM and other nonvolatile memories. NoDelay writes Unlike EEPROM, the CY15B256J performs write operations at Advanced high-reliability ferroelectric process bus speed. No write delays are incurred. Data is written to the 2 memory array immediately after each byte is successfully Fast two-wire serial interface (I C) 1 transferred to the device. The next bus cycle can commence Up to 3.4-MHz frequency without the need for data polling. In addition, the product offers Direct hardware replacement for serial EEPROM substantial write endurance compared with other nonvolatile Supports legacy timings for 100 kHz and 400 kHz memories. F-RAM also exhibits much lower power during writes than EEPROM because write operations do not require an Device ID internally elevated power supply voltage for write circuits. The Manufacturer ID and Product ID 13 CY15B256J is capable of supporting 10 read/write cycles, or 10 million times more write cycles than EEPROM. Low power consumption 500- A active current at 100 kHz These capabilities make the CY15B256J ideal for nonvolatile memory applications, requiring frequent or rapid writes. 500- A standby current Examples range from data logging, where the number of write 12- A sleep mode current cycles may be critical, to demanding industrial controls where the Low-voltage operation: V = 2.0 V to 3.6 V long write time of EEPROM can cause data loss. The combi- DD nation of features allows more frequent data writing with less Automotive-E temperature: 40 C to +125 C overhead for the system. 8-pin small outline integrated circuit (SOIC) package The CY15B256J provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The device incor- AEC Q100 Grade 1 compliant porates a read-only Device ID that allows the host to determine Restriction of hazardous substances (RoHS) compliant the manufacturer, product density, and product revision. The device specifications are guaranteed over an Automotive-E temperature range of 40 C to +125 C. Logic Block Diagram 32 K x 8 Address Counter F-RAM Array Latch 15 8 Serial to Parallel SDA Data Latch Converter 8 8 SCL Device ID and Control Logic WP Manufacturer ID A0-A2 Note 2 1. The CY15B256J does not meet the NXP I C specification in the Fast-mode Plus (Fm+, 1 MHz) for I and in the High Speed Mode (Hs-mode, 3.4 MHz) for V . OL hys Refer to DC Electrical Characteristics on page 11 for more details. Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-10968 Rev. *C Revised November 26, 2018