CY62128EV30LL-45SXI Infineon

CY62128EV30LL-45SXI electronic component of Infineon
CY62128EV30LL-45SXI Infineon
CY62128EV30LL-45SXI SRAM
CY62128EV30LL-45SXI  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CY62128EV30LL-45SXI SRAM across the USA, India, Europe, Australia, and various other global locations. CY62128EV30LL-45SXI SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

Part No. CY62128EV30LL-45SXI
Manufacturer: Infineon
Category: SRAM
Description: IC: SRAM memory; 128kx8bit; 2.2÷3.6V; 45ns; SO32; parallel; 450mils
Datasheet: CY62128EV30LL-45SXI Datasheet (PDF)
Price (USD)
221: USD 2.2313 ea
Line Total: USD 493.12 
Availability : 454
  
Ship by Tue. 18 Nov to Mon. 24 Nov
QtyUnit Price
221$ 2.2313
500$ 2.1164
1000$ 2.0016
10000$ 1.8703

Availability 475
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 221
Multiples : 1
QtyUnit Price
221$ 2.2313
500$ 2.1164
1000$ 2.0016
10000$ 1.8703


Availability 454
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 221
Multiples : 1
QtyUnit Price
221$ 2.2313
500$ 2.1164
1000$ 2.0016
10000$ 1.8703


Availability 194
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 200
Multiples : 200
QtyUnit Price
200$ 1.6294
1000$ 1.5511
2500$ 1.5254
5000$ 1.5102


Availability 995
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 221
Multiples : 1
QtyUnit Price
221$ 2.2313
500$ 2.1164
1000$ 2.0016
10000$ 1.8703


Availability 405
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 92
Multiples : 1
QtyUnit Price
92$ 2.9893
95$ 2.8802
200$ 2.6927


Availability 1799
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 118
Multiples : 1
QtyUnit Price
118$ 2.3165
120$ 2.282
122$ 2.2459
124$ 2.2179
125$ 2.188
250$ 2.0677
500$ 1.7994


Availability 791
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 221
Multiples : 1
QtyUnit Price
221$ 2.2313
500$ 2.1164
1000$ 2.0016
10000$ 1.8703


Availability 232
Ship by Tue. 18 Nov to Mon. 24 Nov
MOQ : 221
Multiples : 1
QtyUnit Price
221$ 2.2313
500$ 2.1164
1000$ 2.0016
10000$ 1.8703

   
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We are delighted to provide the CY62128EV30LL-45SXI from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62128EV30LL-45SXI and other electronic components in the SRAM category and beyond.

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CY62128EV30 MoBL 1-Mbit (128K 8) Static RAM 1-Mbit (128K 8) Static RAM Features Functional Description Very high speed: 45 ns The CY62128EV30 is a high performance CMOS static RAM module organized as 128K words by 8-bits. This device features Temperature ranges: advanced circuit design to provide ultra low active current. This Industrial: 40 C to +85 C is ideal for providing More Battery Life (MoBL ) in portable applications such as cellular telephones. The device also has an Wide voltage range: 2.2 V to 3.6 V automatic power-down feature that significantly reduces power Pin compatible with CY62128DV30 consumption when addresses are not toggling. Placing the device in standby mode reduces power consumption by more Ultra low standby power than 99 percent when deselected (CE HIGH or CE LOW). The 1 2 Typical standby current: 1 A eight input and output pins (I/O through I/O ) are placed in a 0 7 Maximum standby current: 4 A high impedance state when the device is deselected (CE HIGH 1 or CE LOW), the outputs are disabled (OE HIGH), or a write 2 Ultra low active power operation is in progress (CE LOW and CE HIGH and WE 1 2 Typical active current: 1.3 mA at f = 1 MHz LOW). Easy memory expansion with CE , CE and OE features 1 2, To write to the device, take chip enable (CE LOW and CE 1 2 HIGH) and write enable (WE) inputs LOW. Data on the eight I/O Automatic power-down when deselected pins is then written into the location specified on the address pin Complementary metal oxide semiconductor (CMOS) for (A through A ). 0 16 optimum speed and power To read from the device, take chip enable (CE LOW and CE 1 2 Offered in Pb-free 32-pin small outline integrated circuit (SOIC), HIGH) and output enable (OE) LOW while forcing write enable 32-pin thin small outline package (TSOP) Type I, and 32-pin (WE) HIGH. Under these conditions, the contents of the memory shrunk thin small outline package (STSOP) packages location specified by the address pins appear on the I/O pins. For a complete list of related resources, click here. Logic Block Diagram INPUT BUFFER I/O 0 A 0 A I/O 1 1 A 2 A I/O 3 2 A 4 A 128K x 8 I/O 5 3 A 6 A ARRAY I/O 7 4 A 8 A I/O 9 5 A 10 A I/O 11 6 CE 1 I/O POWER CE 7 2 COLUMN DECODER WE DOWN OE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05579 Rev. *P Revised March 29, 2019 ROW DECODER A 12 A 13 A 14 A 15 A 16 SENSE AMPS CY62128EV30 MoBL Contents Pin Configuration .............................................................3 Ordering Information ...................................................... 12 Product Portfolio ..............................................................3 Ordering Code Definitions ......................................... 12 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 13 Operating Range ...............................................................4 Acronyms ........................................................................ 16 Electrical Characteristics .................................................4 Document Conventions ................................................. 16 Capacitance ......................................................................5 Units of Measure ....................................................... 16 Thermal Resistance ..........................................................5 Document History Page ................................................. 17 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 20 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 20 Data Retention Waveform ................................................6 Products .................................................................... 20 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 20 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 20 Truth Table ......................................................................11 Technical Support ..................................................... 20 Document Number: 38-05579 Rev. *P Page 2 of 20

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
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INTL RECTIFIER
IR
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