X-On Electronics has gained recognition as a prominent supplier of CY62136EV30LL-45ZSXIT SRAM across the USA, India, Europe, Australia, and various other global locations. CY62136EV30LL-45ZSXIT SRAM are a product manufactured by Infineon. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

CY62136EV30LL-45ZSXIT Infineon

CY62136EV30LL-45ZSXIT electronic component of Infineon
CY62136EV30LL-45ZSXIT Infineon
CY62136EV30LL-45ZSXIT SRAM
CY62136EV30LL-45ZSXIT  Semiconductors

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Part No. CY62136EV30LL-45ZSXIT
Manufacturer: Infineon
Category: SRAM
Description: SRAM 2Mb 3V 45ns 128K x 16 LP SRAM
Datasheet: CY62136EV30LL-45ZSXIT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.525 ea
Line Total: USD 4.53 
Availability - 1940
Ship by Fri. 16 May to Tue. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940
Ship by Fri. 16 May to Tue. 20 May
MOQ : 1
Multiples : 1
1 : USD 4.525
10 : USD 3.74
25 : USD 3.443
100 : USD 3.322
250 : USD 3.223
500 : USD 3.135
1000 : USD 2.761
5000 : USD 2.695

   
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We are delighted to provide the CY62136EV30LL-45ZSXIT from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CY62136EV30LL-45ZSXIT and other electronic components in the SRAM category and beyond.

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CY62136EV30 MoBL 2-Mbit (128 K 16) Static RAM 2-Mbit (128 K 16) Static RAM Features Functional Description Very high speed: 45 ns The CY62136EV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features Wide voltage range: 2.20 V to 3.60 V advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL ) in portable Pin compatible with CY62136CV30 applications such as cellular telephones. The device also has an Ultra low standby power automatic power down feature that significantly reduces power Typical standby current: 1 A consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by Maximum standby current: 7 A more than 99% when deselected (CE HIGH). The input/output Ultra low active power pins (I/O through I/O ) are placed in a high impedance state 0 15 Typical active current: 2 mA at f = 1 MHz when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, Easy memory expansion with CE and OE features BLE HIGH), or during a write operation (CE LOW and WE LOW). Automatic power down when deselected Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is Complementary metal oxide semiconductor (CMOS) for LOW, then data from I/O pins (I/O through I/O ), is written into optimum speed/power 0 7 the location specified on the address pins (A through A ). If 0 16 Offered in a Pb-free 48-ball very fine ball grid array (VFBGA) Byte High Enable (BHE) is LOW, then data from I/O pins (I/O 8 and 44-pin thin small outline package (TSOP II) packages through I/O ) is written into the location specified on the address 15 pins (A through A ). 0 16 Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on I/O to I/O . If Byte High Enable (BHE) is LOW, then data from 0 7 memory appear on I/O to I/O . See the Truth Table on page 11 8 15 for a complete description of read and write modes. Logic Block Diagram DATA IN DRIVERS A 10 A 9 A 8 A 7 A 6 A 128K x 16 5 A 4 RAM Array I/O I/O 0 7 A 3 I/O I/O A 8 15 2 A 1 A 0 COLUMN DECODER BHE WE CE OE BLE Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 38-05569 Rev. *F Revised August 22, 2013 ROW DECODER A 11 A 12 A 13 A 14 A 15 A 16 SENSE AMPS CY62136EV30 MoBL Contents Pin Configuration .............................................................3 Ordering Information ...................................................... 12 Product Portfolio ..............................................................3 Ordering Code Definitions ......................................... 12 Maximum Ratings .............................................................4 Package Diagrams .......................................................... 13 Operating Range ...............................................................4 Acronyms ........................................................................15 Electrical Characteristics .................................................4 Document Conventions ................................................. 15 Capacitance ......................................................................5 Units of Measure ....................................................... 15 Thermal Resistance ..........................................................5 Document History Page ................................................. 16 AC Test Loads and Waveforms .......................................5 Sales, Solutions, and Legal Information ...................... 17 Data Retention Characteristics .......................................6 Worldwide Sales and Design Support ....................... 17 Data Retention Waveform ................................................6 Products ....................................................................17 Switching Characteristics ................................................7 PSoC Solutions ...................................................... 17 Switching Waveforms ......................................................8 Cypress Developer Community ................................. 17 Truth Table ......................................................................11 Technical Support ..................................................... 17 Document Number: 38-05569 Rev. *F Page 2 of 17

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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