Product Information

CY7C1380KV33-200AXC

CY7C1380KV33-200AXC electronic component of Infineon

Datasheet
SRAM SYNC SRAMS

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

72: USD 24.8161 ea
Line Total: USD 1786.76

0 - Global Stock
MOQ: 72  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 72
Multiples : 1
72 : USD 24.8161
144 : USD 23.5894

0 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 72
Multiples : 72
72 : USD 31.5861

0 - WHS 3


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 72
Multiples : 72
72 : USD 30.0661
288 : USD 29.6627
504 : USD 29.4016
1008 : USD 28.8203
2520 : USD 28.7491

     
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CY7C1380KV33 CY7C1382KV33 18-Mbit (512K 36/1M 18) Pipelined SRAM 18-Mbit (512K 36/1M 18) Pipelined SRAM Features Functional Description Supports bus operation up to 250 MHz The CY7C1380KV33/CY7C1382KV33 SRAM integrates 524,288 36 and 1,048,576 18 SRAM cells with advanced Available speed grades are 250, 200, and 167 MHz synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by Registered inputs and outputs for pipelined operation registers controlled by a positive edge triggered clock input 3.3 V core power supply (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining chip enable (CE ), depth-expansion 2.5 V or 3.3 V I/O power supply 1 chip enables (CE and CE ), burst control inputs (ADSC, ADSP, 2 3 Fast clock-to-output times and ADV), write enables (BW , and BWE), and global write X 2.5 ns (for 250 MHz device) (GW). Asynchronous inputs include the output enable (OE) and the ZZ pin. Provides high performance 3-1-1-1 access rate Addresses and chip enables are registered at rising edge of Separate processor and controller address strobes clock when address strobe processor (ADSP) or address strobe Synchronous self-timed write controller (ADSC) are active. Subsequent burst addresses can be internally generated as they are controlled by the advance pin Asynchronous output enable (ADV). Single cycle chip deselect Address, data inputs, and write controls are registered on-chip to initiate a self-timed write cycle. This part supports byte write Available in JEDEC-standard Pb-free 100-pin TQFP and non Pb-free 165-ball FBGA package. operations (see Pin Definitions on page 6 and Truth Table on page 10 for further details). Write cycles can be one to two or four IEEE 1149.1 JTAG-Compatible Boundary Scan bytes wide as controlled by the byte write control inputs. GW ZZ sleep mode option when active LOW causes all bytes to be written. The CY7C1380KV33/CY7C1382KV33 operates from a +3.3 V core power supply while all outputs operate with a +2.5 or +3.3 V power supply. All inputs and outputs are JEDEC-standard and JESD8-5-compatible. Selection Guide Description 250 MHz 200 MHz 167 MHz Unit Maximum Access Time 2.5 3.0 3.4 ns Maximum Operating Current 18 180 158 143 mA 36 200 178 163 Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 001-97878 Rev. *E Revised July 1, 2016CY7C1380KV33 CY7C1382KV33 Logic Block Diagram CY7C1380KV33 A0, A1, A ADDRESS REGISTER 2 A 1:0 MODE ADV Q1 BURST CLK COUNTER AND CLR Q0 LOGIC ADSC ADSP DQ D , DQP D DQ D ,DQP D BYTE BYTE BW D WRITE REGISTER WRITE DRIVER DQ C , DQP C DQ C , DQP C BYTE BW C BYTE OUTPUT WRITE DRIVER OUTPUT WRITE REGISTER MEMORY DQs SENSE BUFFERS ARRAY REGISTERS AMPS DQP A DQ B , DQP B E DQ B , DQP B DQP B BYTE BYTE BW B DQP C WRITE DRIVER WRITE REGISTER DQP D DQ A , DQP A DQ A , DQP A BYTE BYTE BW A WRITE DRIVER WRITE REGISTER BWE INPUT GW REGISTERS ENABLE PIPELINED CE 1 REGISTER ENABLE CE 2 CE 3 OE SLEEP ZZ CONTROL Logic Block Diagram CY7C1382KV33 ADDRESS A0, A1, A REGISTER 2 ADV Q1 BURST CLK COUNTER AND LOGIC ADSC DQ B, DQP B DQ B, DQP B WRITE DRIVER WRITE REGISTER OUTPUT BW B DQs OUTPUT SENSE MEMORY BUFFERS DQP A ARRAY DQP B DQ A,DQP A DQ A,DQP A WRITE DRIVER BW A WRITE REGISTER BWE INPUT GW ENABLE CE 1 PIPELINED REGISTER CE2 ENABLE CE3 OE SLEEP ZZ CONTROL Document Number: 001-97878 Rev. *E Page 2 of 33

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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