X-On Electronics has gained recognition as a prominent supplier of D8320N04T VF Rectifiers across the USA, India, Europe, Australia, and various other global locations. D8320N04T VF Rectifiers are a product manufactured by Infineon. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

D8320N04T VF Infineon

D8320N04T VF electronic component of Infineon
D8320N04T VF Infineon
D8320N04T VF Rectifiers
D8320N04T VF  Semiconductors

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See Product Specifications
Part No. D8320N04T VF
Manufacturer: Infineon
Category: Rectifiers
Description: Rectifiers STD THYR/DIODEN DISC
Datasheet: D8320N04T VF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
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MOQ : 2
Multiples : 2
2 : USD 873.9588
10 : USD 845.302
N/A

Obsolete
   
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We are delighted to provide the D8320N04T VF from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the D8320N04T VF and other electronic components in the Rectifiers category and beyond.

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Datenblatt / Data sheet N Vorlufige Daten Netz-Gleichrichterdiode Rectifier Diode D8320N preliminary data Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / maximum rated values V 400 V Periodische Spitzensperrspannung T = -25C... T RRM vj vj max Kenndaten 600 V repetitive peak reverse voltages Elektrische Eigenschaften Durchlastrom-Grenzeffektivwert I 13300 A FRMSM maximum RMS on-state current T = 56 C C Dauergrenzstrom I 8320A FAVM average on-state current Stostrom-Grenzwert T = 25 C, t = 10 ms I 103000 A vj P FSM = T t = 10 ms surge cur rent T 95000 A vj vj max P Grenzlastintegral T = 25 C, t = 10 ms It 53000 10As vj P It-value T = T , t = 10 ms 45000 10As vj vj max P Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 10,0 kA v max. 0,940 V vj vj max F F on-state voltage T = T , i = 4,0 kA max. 0,795 V vj vj max F Schleusenspannung T = T V 0,7 V vj vj max (TO) threshold voltage m Ersatzwiderstand T = T r 0,024 vj vj max T slope resistance T = T A= 8,869E-01 Durchlakennlinie 2500 A i 35000 A vj vj max F B= 2,664E-06 on-state characteristic C= -4,856E-02 v = A + B i + C ln ( i + 1 ) + D i F F F F D= 4,741E-03 max. Sperrstrom T = T , v = V i 100 mA vj vj max R RRM R reverse current Thermische Eigenschaften / Thermal properties Thermische Eigenschaften Khlflche / cooling surface R Innerer Wrmewiderstand thJC beidseitig / two-sided, = 180sin max. 0,0125 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,0117 C/W Anode / anode, = 180sin max. 0,0232 C/W Anode / anode, DC max. 0,0225 C/W Kathode / cathode, = 180sin max. 0,0250 C/W Kathode / cathode, DC max. 0,0245 C/W Khlflche / cooling surface bergangs-Wrmewiderstand R thCH beidseitig / two-sided max. 0,003 C/W thermal resistance, case to heatsink 180 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T -25...+150C c op operating temperature T -25...+150C stg Lagertemperatur storage temperature prepared by: H.Sandmann date of publication: 2008-04-10 revision: 1 approved by: M.Leifeld IFBIP D AEC / 2008-04-09, H.Sandmann A 15/08 Seite/page 1/8 Datenblatt / Data sheet N Vorlufige Daten Netz-Gleichrichterdiode Rectifier Diode D8320N preliminary data Mechanische Eigenschaften / Mechanical properties Seite 3 Gehuse, siehe Anlage Mechanische Eigenschaften page 3 case, see annex Si-Element mit Druckkontakt Si-pellet with pressure contact Anprekraft F 40...80kN clamping force Gewicht G typ. 900g weight Kriechstrecke 30mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. IFBIP D AEC / 2008-04-09, H.Sandmann A 15/08 Seite/page 2/8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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