Product Information

DD175N32K

DD175N32K electronic component of Infineon

Datasheet
Discrete Semiconductor Modules 3200V 350A

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 248.6818 ea
Line Total: USD 248.68

2 - Global Stock
Ships to you between
Mon. 13 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2 - Warehouse 1


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

DD175N32K
Infineon

1 : USD 288.9835
12 : USD 277.2995
27 : USD 277.242
51 : USD 277.219
102 : USD 277.1845
252 : USD 277.15
501 : USD 277.0925
1002 : USD 277.058
2502 : USD 277.035

     
Manufacturer
Product Category
Product
Type
Vr - Reverse Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Hts Code
LoadingGif

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Datenblatt / Data sheet Netz-Dioden-Modul DD175N Rectifier Diode Module Kenndaten Key Parameters Elektrische Eigenschaften V / V 2800 - 3400 V DRM RRM Thermis I 175 A (T =100 C) FAVM C I 4500 A FSM 3570A (T =55C) C V 0,9 V T0 r 1,8 m T R 0,17 K/W thJC Base plate 50 mm Weight 800 g For type designation please refer to actual short form catalog Datenblatt / Data sheet Netz-Dioden-Modul DD175N Rectifier Diode Module DD175N Elektrische Eigenschaften / Electrical properties che Eigenschaften Hchstzulssige Werte / Maximum rated values 2800 3000 V Periodische Spitzensperrspannung T = -40C... T V vj vj max RRM 1) 3200 3400 V repetitive peak reverse voltages 2900 3100 V Stospitzensperrspannung T = +25C... T V vj vj max RSM 3300 3500 V non-repetitive peak reverse voltage 350 A Durchlastrom-Grenzeffektivwert I FRMSM maximum RMS on-state current 175 A Dauergrenzstrom T = 100C I C FAVM 223 A average on-state current T = 78C C 4.500 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P FSM 4.000 A surge current T = T , t = 10 ms vj vj max P 101.000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 80.000 As It-value T = T , t = 10 ms vj vj max P Charakteristische Werte / Characteristic values max. 2,05 V Durchlaspannung T = T , i = 600 A v vj vj max F F on-state voltage 0,9 V Schleusenspannung T = T V vj vjmax (TO) threshold voltage 1,8 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Sperrstrom T = T , v = V i 20 mA vj vj max R RRM R reverse current Isolations-Prfspannung RMS, f = 50 Hz, t = 1 sec V 3,6 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 min 3,0 kV Thermische Eigenschaften / Thermal properties pro Modul / per Module, = 180 sin R max. 0,085 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,170 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,082 C/W pro Zweig / per arm, DC max. 0,164 C/W pro Modul / per Module max. 0,02 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,04 C/W thermal resistance, case to heatsink 150 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T - 40...+150 C c op operating temperature T - 40...+150 C Lagertemperatur stg storage temperature 1) 3400V auf Anfrage/ 3400V on request prepared by: A.G. date of publication: 27.09.16 approved by: M.S. revision: 3.0 Revision 3.0 Seite/page 2/11 Date of Publication 2016-09-27

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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INF
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Infineon IR
INFINEON (CYPRESS)
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Infineon / Cypress
Infineon / IR
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Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
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IR
IRH
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SPANSION

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