X-On Electronics has gained recognition as a prominent supplier of DD230S26K discrete semiconductor modules across the USA, India, Europe, Australia, and various other global locations. DD230S26K discrete semiconductor modules are a product manufactured by Infineon. We provide cost-effective solutions for discrete semiconductor modules, ensuring timely deliveries around the world.

DD230S26K

DD230S26K electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.DD230S26K
Manufacturer: Infineon
Category:Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 2600V 410A
Datasheet: DD230S26K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 285.467
5 : USD 281.268
10 : USD 281.268
25 : USD 281.268
100 : USD 281.242
250 : USD 267.683
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 284.3169
N/A

Obsolete
     
Manufacturer
Product Category
Mounting
Case
Electrical Mounting
Semiconductor Structure
Type Of Module
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
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We proudly offer the DD230S26K Discrete Semiconductor Modules at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the DD230S26K Discrete Semiconductor Modules.

European Power- Semiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 230 S 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998DD 230 S Elektrische Eigenschaften Electrical properties Hchstzulssige Werte Maximum rated values Periodische Rckwrts- 1800 2000 2200 repetitive peak reverse voltage t = -40C...+ 150C V V vj RRM Spitzensperrspannung 2400 2600 1900 2100 2300 t = +25C...+ 150C V Rckwrts-Stospitzenspannung non-repetitive peak reverse voltage V vj RSM 2500 2700 Durchlastrom-Grenzeffektivwert RMS forward current I 410 A FRMSM Dauergrenzstrom mean forward current t = 100C I 230 A c FAVM t = 91C 261 A c t = 25C, t = 10 ms I Stostrom-Grenzwert surge forward current 9000 A vj p FSM t = t , t = 10 ms 7500 A vj vj max p 2 2 2 t = 25C, t = 10 ms Grenzlastintegral I t-value I t 405000 A s vj p 2 t = t , t = 10 ms 281000 A s vj vj max p Charakteristische Werte Characteristic values Durchlaspannung forward voltage t = t , i = 800 A v max. 1,74 V vj vj max F F Schleusenspannung threshold voltage t = t V 1,0 V vj vj max (TO) t = t r Ersatzwiderstand forward slope resistance 0,8 m vj vj max T t = t , v = V i Rckwrts-Sperrstrom reverse current max. 160 mA vj vj max R RRM R V Isolations-Prfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. 3 kV ISOL Thermische Eigenschaften Thermal properties Innerer Wrmewiderstand thermal resistance, junction =180el. sin: pro Modul/per module R max. 0,075 C/W thJC to case pro Zweig/per arm max. 0,150 C/W DC: pro Modul/per module max. 0,072 C/W pro Zweig/per arm max. 0,144 C/W R bergangs-Wrmewiderstand thermal resistance, case to heatsink pro Modul/per module max. 0,02 C/W thCK pro Zweig/per arm max. 0,04 C/W Hchstzul.Sperrschichttemperatur max. junction temperature t 150 C vj max Betriebstemperatur operating temperature t -40...+150 C c op 1) t Lagertemperatur storage temperature -40...+150 C stg Mechanische Eigenschaften Mechanical properties Gehuse, siehe Anlage case, see appendix Si-Elemente mit Druckkontakt Si-pellets with pressure contact Innere Isolation internal insulation AIN Anzugsdrehmomente tightening torques mechanische Befestigung mounting torque Toleranz/tolerance +/- 15% M1 6 Nm elektrische Anschlsse terminal connection torque Toleranz/tolerance +5%/-10% M2 12 Nm Gewicht weight G typ. 800 g Kriechstrecke creepage distance 17 mm Schwingfestigkeit vibration resistance f = 50 Hz 5 9,81 m/s 1) Gem DIN IEC 749 mit 747-1 gilt eine Zeitbegrenzung von 672 h. Fr die im Betrieb auftretende Gehusetemperatur gilt keine zeitliche Begrenzung. 1) According to DIN IEC 749 with 747-1 a time-limit of 672 h is defined. There is no time-limit set for case temperture during operation.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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