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DD800S17H4_B2

DD800S17H4_B2 electronic component of Infineon
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See Product Specifications
Part No.DD800S17H4_B2
Manufacturer: Infineon
Category:Rectifiers
Description: Rectifiers IGBT Module 800A 1700V
Datasheet: DD800S17H4_B2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1135.7868 ea
Line Total: USD 1135.79

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 994.956

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Technische Information / Technical Information IGBT-Modul DD800S17H4 B2 IGBT-Module IHM-B Modul IHM-B module V = 1700V CES I = 800A / I = 1600A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-level-applications Aktiver Eingang (Rckspeisung) Active frontend (energy recovery) Hochleistungsumrichter High power converters Multi-Level Umrichter Multi level inverter Traktionsumrichter Traction drives Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended operating temperature Tvj op Hohe Stromdichte High current density T = 150C T = 150C vj op vj op Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Last- und thermische Wechselfestigkeit High power and thermal cycling capability Hohe Leistungsdichte High power density IHM B Gehuse IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul DD800S17H4 B2 IGBT-Module Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung Tvj = -40C 1570 Repetitive peak reverse voltage T = 25C V 1700 V vj RRM Tvj = 150C 1700 Dauergleichstrom I 800 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 1600 A P FRM Repetitive peak forward current Grenzlastintegral VR = 0 V, tP = 10 ms, Tvj = 125C 105 kAs It It - value V = 0 V, t = 10 ms, T = 150C 95,0 kAs R P vj Spitzenverlustleistung T = 125C P 800 kW vj RQM Maximum power dissipation Mindesteinschaltdauer ton min 10,0 s Minimum turn-on time Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 800 A, V = 0 V T = 25C 1,80 2,10 V F GE vj Forward voltage I = 800 A, V = 0 V T = 125C V 1,90 2,10 V F GE vj F I = 800 A, V = 0 V T = 150C 1,95 V F GE vj Rckstromspitze I = 800 A, - di /dt = 6500 A/s (T =150C) T = 25C 900 A F F vj vj Peak reverse recovery current V = 900 V T = 125C I 1000 A R vj RM V = -15 V T = 150C 1050 A GE vj Sperrverzgerungsladung I = 800 A, - di /dt = 6500 A/s (T =150C) T = 25C 190 C F F vj vj Recovered charge V = 900 V T = 125C Q 320 C R vj r V = -15 V T = 150C 360 C GE vj Abschaltenergie pro Puls I = 800 A, - di /dt = 6500 A/s (T =150C) T = 25C 110 mJ F F vj vj Reverse recovery energy V = 900 V T = 125C E 200 mJ R vj rec V = -15 V T = 150C 230 mJ GE vj Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 39,1 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 33,0 K/kW Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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