Technische Information / technical information IGBT-Module DF200R12KE3 IGBT-Modules Hchstzulssige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung T = 25C V 1200 V vj CES collector emitter voltage Kollektor Dauergleichstrom T = 80C I 200 A c C, nom DC collector current T = 25C I 295 A c C Periodischer Kollektor Spitzenstrom t = 1ms, T = 80C I 400 A p c CRM repetitive peak collector current Gesamt Verlustleistung T = 25C Transistor P 1040 W c tot total power dissipation Gate Emitter Spitzenspannung V +/- 20 V GES gate emitter peak voltage Dauergleichstrom I 200 A F DC forward current Periodischer Spitzenstrom t = 1ms I 400 A p FRM repetitive peak forward current Grenzlastintegral V = 0V, t = 10ms, T = 125C It 7,8 k As R p vj It value Isolations Prfspannung RMS, f= 50Hz, t= 1min. V 2,5 kV ISOL insulation test voltage Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. I = 200A, V = 15V, T = 25C - 1,7 2,15 V C GE vj Kollektor Emitter Sttigungsspannung V CEsat collector emitter saturation voltage I = 200A, V = 15V, T = 125C - 2,0 - V C GE vj Gate Schwellenspannung I = 8mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GE(th) gate threshold voltage Gateladung V = -15V...+15V Q 1,9 C GE G - - gate charge Eingangskapazitt f= 1MHz, T = 25C, V = 25V, V = 0V C 14 nF vj CE GE ies - - input capacitance Rckwirkungskapazitt f= 1MHz, T = 25C, V = 25V, V = 0V C - 0,5 - nF vj CE GE res reverse transfer capacitance Kollektor Emitter Reststrom V = 0V, T = 25C, V = 600V I - - 5 mA GE vj CE CES collector emitter cut off current Gate Emitter Reststrom V = 0V, V = 20V, T = 25C I - - 400 nA CE GE vj GES gate emitter leakage current prepared by: MOD-D2 Mark Mnzer date of publication: 2002-10-07 approved: SM TM Wilhelm Rusche revision: 3.0 DB DF200R12KE3 3.0 1 (8) 2002-10-07Technische Information / technical information IGBT-Module DF200R12KE3 IGBT-Modules Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. I = 200A, V = 600V C CC Einschaltverzgerungszeit (induktive Last) V = 15V, R = 3,6 , T = 25C t d,on - 0,25 - s GE G vj turn on delay time (inductive load) V = 15V, R = 3,6 , T = 125C GE G vj - 0,30 - s I = 200A, V = 600V C CC Anstiegszeit (induktive Last) V = 15V, R = 3,6 , T = 25C t r - 0,09 - s GE G vj rise time (inductive load) V = 15V, R = 3,6 , T = 125C GE G vj - 0,10 - s I = 200A, V = 600V C CC Abschaltverzgerungszeit (induktive Last) V = 15V, R = 3,6 , T = 25C t d,off - 0,55 - s GE G vj turn off delay time (inductive load) V = 15V, R = 3,6 , T = 125C GE G vj - 0,65 - s I = 200A, V = 600V C CC Fallzeit (induktive Last) V = 15V, R = 3,6 , T = 25C t f - 0,13 - s GE G vj fall time (inductive load) V = 15V, R = 3,6 , T = 125C GE G vj - 0,18 - s I = 200A, V = 600V, L = 80nH C CC Einschaltverlustenergie pro Puls E - 15 - mJ on turn on energy loss per pulse V = 15V, R = 3,6 , T = 125C GE G vj I = 200A, V = 600V, L = 80nH C CC Ausschaltverlustenergie pro Puls E - 35 - mJ off turn off energy loss per pulse V = 15V, R = 3,6 , T = 125C GE G vj t 10s, V 15V, T 125C Kurzschlussverhalten P GE Vj I - 800 - A SC SC data V = 900V, V = V - L di/dt CC CEmax CES CE Modulinduktivitt L - 20 - nH CE stray inductance module Leitungswiderstand, Anschluss-Chip T = 25C R - 0,7 - c CC/EE m lead resistance, terminal-chip Charakteristische Werte / characteristic values Inversdiode / free wheel diode I = 200A, V = 0V, T = 25C - 1,65 2,15 V F GE vj Durchlassspannung V F forward voltage I = 200A, V = 0V, T = 125C - 1,65 - V F GE vj I =200A, -di /dt= 2000A/s F F Rckstromspitze I A RM - 150 - V = 600V, V = -15V, T = 25C R GE vj peak reverse recovery current A - 190 - V = 600V, V = -15V, T = 125C R GE vj I =200A, -di /dt= 2000A/s F F Sperrverzgerungsladung Q C r - 20 - V = 600V, V = -15V, T = 25C R GE vj recovered charge C - 36 - V = 600V, V = -15V, T = 125C R GE vj I = 200A, -di /dt= 2000A/s F F Ausschaltenergie pro Puls E mJ rec - 9 - V = 600V, V = -15V, T = 25C R GE vj reverse recovery energy mJ - 17 - V = 600V, V = -15V, T = 125C R GE vj DB DF200R12KE3 3.0 2 (8) 2002-10-07