/ Technical Information IGBT- DF200R12W1H3 B27 IGBT-modules / Preliminary Data J VCES = 1200V I = 30A / I = 60A C nom CRM Typical Applications Solar Applications Electrical Features Low Switching Losses Mechanical Features Al O Al O Substrate with Low Thermal Resistance 2 3 2 3 NTC Integrated NTC temperature sensor Compact design PressFIT PressFIT Contact Technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CM date of publication: 2013-11-25 approved by: MB revision: 2.0 UL approved (E83335) 1 / Technical Information IGBT- DF200R12W1H3 B27 IGBT-modules Preliminary Data A / Inverse-polarity protection diode A / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage () T = 80C I 50 A C FRMSM Maximum RMS forward current per chip T = 80C I 60 A C RMSM Maximum RMS current at rectifier output t = 10 ms, T = 25C 360 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 290 A I2t- tp = 10 ms, Tvj = 25C 650 As It It - value t = 10 ms, T = 150C 420 As p vj / Characteristic Values min. typ. max. T = 150C, I = 30 A V 0,95 V vj F F Forward voltage Tvj = 150C rT 0,10 m Slope resistance T = 150C, V = 1200 V I 0,10 mA vj R R Reverse current / per diode RthJC 0,80 0,90 K/W Thermal resistance, junction to case / per diode R 0,80 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 125 C Temperature under switching conditions prepared by: CM date of publication: 2013-11-25 approved by: MB revision: 2.0 2