F4-50R07W2H3_B51 Infineon

F4-50R07W2H3_B51 electronic component of Infineon Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of F4-50R07W2H3_B51 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. F4-50R07W2H3_B51 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

Part No. F4-50R07W2H3_B51
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules
Surface-mount metal, fast switching N-channel MOSFET energy-saving device with RDSon of 7mOhm.
Datasheet: F4-50R07W2H3_B51 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 62.181
10$ 56.4093
30$ 54.0589
105$ 52.2779
255$ 49.8306
N/A

Obsolete
   
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Product Category
RoHS - XON
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We are delighted to provide the F4-50R07W2H3_B51 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the F4-50R07W2H3_B51 and other electronic components in the IGBT Modules category and beyond.

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The F4-50R07W2H3_B51 is an isolated dual full-bridge MOSFET driver from Infineon. It is designed for use in high-voltage automotive applications and features a highly efficient gate driving scheme to reduce power consumption and improve the switching performance of the MOSFET. The driver is rated for a maximum input voltage of 50V and an output peak current of 4A. It also features a built-in thermal protection switch, which protects the device from over-temperature conditions. This device is part of Infineon’s CoolMOS invention to reduce switching losses in power electronic applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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