FD1000R33HL3-K IHM-B Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode V = 3300V CES I = 1000A / I = 2000A C nom CRM Potentielle Anwendungen Potential Applications Chopper-Anwendungen Chopper applications Mittelspannungsantriebe Medium voltage converters Motorantriebe Motor drives Traktionsumrichter Traction drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Groe DC-Festigkeit High DC stability Hohe Kurzschlussrobustheit High short-circuit capability Niedriges VCEsat Low VCEsat Sehr groe Robustheit Unbeatable robustness T = 150C T = 150C vj op vj op V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive temperature coefficient Mechanische Eigenschaften Mechanical Features AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Gehuse mit CTI > 600 Package with CTI > 600 IHM B Gehuse IHM B housing Isolierte Bodenplatte Isolated base plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.3 www.infineon.com 2019-07-24FD1000R33HL3-K IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Tvj = -40C 3300 V V CES Collector-emitter voltage T = 150C 3300 vj Kollektor-Dauergleichstrom TC = 95C, Tvj max = 150C ICDC 1000 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 2000 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 1000 A Tvj = 25C 2,40 2,85 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,95 3,50 V GE vj CE sat Tvj = 150C 3,10 V Gate-Schwellenspannung IC = 48,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 / 15 V, V = 1800 V Q 28,0 C GE CE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,63 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 190 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 4,00 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 3300 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 1000 A, VCE = 1800 V Tvj = 25C 0,36 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,40 s GE vj R = 0,75 , C = 220 nF T = 150C 0,40 s Gon GE vj Anstiegszeit, induktive Last IC = 1000 A, VCE = 1800 V Tvj = 25C 0,37 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,40 s GE vj R = 0,75 , C = 220 nF T = 150C 0,40 s Gon GE vj Abschaltverzgerungszeit, induktive Last I = 1000 A, V = 1800 V T = 25C 4,10 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 4,30 s GE vj R = 4,1 , C = 220 nF T = 150C 4,30 s Goff GE vj Fallzeit, induktive Last I = 1000 A, V = 1800 V T = 25C 0,40 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,40 s GE vj R = 4,1 , C = 220 nF T = 150C 0,40 s Goff GE vj Einschaltverlustenergie pro Puls I = 1000 A, V = 1800 V, L = 85 nH T = 25C 1550 mJ C CE vj Turn-on energy loss per pulse di/dt = 3000 A/s (T = 150C) T = 125C 2150 mJ vj vj Eon V = -15 / 15 V, R = 0,75 T = 150C 2400 mJ GE Gon vj CGE = 220 nF Abschaltverlustenergie pro Puls I = 1000 A, V = 1800 V, L = 85 nH T = 25C 1600 mJ C CE vj Turn-off energy loss per pulse du/dt = 1550 V/s (T = 150C) T = 125C 1950 mJ vj vj E off VGE = -15 / 15 V, RGoff = 4,1 Tvj = 150C 2050 mJ C = 220 nF GE Kurzschluverhalten V 15 V, V = 2500 V GE CC I SC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 4300 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 11,0 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 14,5 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.3 2019-07-24