/ Technical Information IGBT- FD400R33KF2C-K IGBT-modules IGBT, - / IGBT, Brake-Chopper Preliminary Data / Maximum Rated Values Tvj = 25C 3300 V V CES Collector-emitter voltage T = -25C 3300 vj T = 80C, T = 150C I 400 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 660 A t = 1 ms I 800 A P CRM Repetitive peak collector current T = 25C, T = 150C P 4,80 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 400 A, V = 15 V T = 25C 3,40 4,25 V C GE vj V CE sat Collector-emitter saturation voltage I = 400 A, V = 15 V T = 125C 4,30 5,00 V C GE vj IC = 40,0 mA, VCE = VGE, Tvj = 25C VGEth 4,2 5,1 6,0 V Gate threshold voltage V = -15 V ... +15 V, V = 1800V Q 8,00 C GE CE G Gate charge Tvj = 25C RGint 1,3 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 50,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,70 nF Reverse transfer capacitance - V = 3300 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 400 A, VCE = 1800 V Tvj = 25C 0,28 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,28 s GE vj RGon = 2,7 , CGE = 68,0 nF () IC = 400 A, VCE = 1800 V Tvj = 25C 0,18 s t r Rise time, inductive load V = 15 V T = 125C 0,20 s GE vj RGon = 2,7 , CGE = 68,0 nF () IC = 400 A, VCE = 1800 V Tvj = 25C 1,55 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,70 s GE vj RGoff = 3,6 , CGE = 68,0 nF () IC = 400 A, VCE = 1800 V Tvj = 25C 0,20 s t f Fall time, inductive load V = 15 V T = 125C 0,20 s GE vj RGoff = 3,6 , CGE = 68,0 nF () IC = 400 A, VCE = 1800 V, LS = 60 nH Tvj = 25C 470 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 730 mJ GE vj on RGon = 2,7 , CGE = 68,0 nF ( IC = 400 A, VCE = 1800 V, LS = 60 nH Tvj = 25C 430 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 510 mJ GE vj off RGoff = 3,6 , CGE = 68,0 nF VGE 15 V, VCC = 2500 V I SC SC data V = V -L di/dt t 10 s, T = 125C 2000 A CEmax CES sCE P vj IGBT / per IGBT R 26,0 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 12,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: SB date of publication: 2013-11-25 approved by: DTS revision: 2.2 1 / Technical Information IGBT- FD400R33KF2C-K IGBT-modules Preliminary Data - / Diode, Brake-Chopper / Maximum Rated Values Tvj = 25C 3300 V V RRM Repetitive peak reverse voltage T = -25C 3300 vj I 400 A F Continuous DC forward current t = 1 ms I 800 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 55,5 kAs R P vj It - value Tvj = 125C PRQM 800 kW Maximum power dissipation t 10,0 s on min Minimum turn-on time / Characteristic Values min. typ. max. I = 400 A, V = 0 V T = 25C 2,80 3,50 V F GE vj VF Forward voltage I = 400 A, V = 0 V T = 125C 2,80 3,50 V F GE vj IF = 400 A, - diF/dt = 2200 A/s (Tvj=125C) Tvj = 25C 550 A Peak reverse recovery current V = 1800 V T = 125C I 650 A R vj RM V = -15 V GE IF = 400 A, - diF/dt = 2200 A/s (Tvj=125C) Tvj = 25C 235 C Recovered charge V = 1800 V T = 125C Q 440 C R vj r V = -15 V GE IF = 400 A, - diF/dt = 2200 A/s (Tvj=125C) Tvj = 25C 245 mJ Reverse recovery energy V = 1800 V T = 125C E 515 mJ R vj rec V = -15 V GE / per diode R 51,0 K/kW thJC Thermal resistance, junction to case / per diode RthCH 24,0 K/kW Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 125 C vj op Temperature under switching conditions prepared by: SB date of publication: 2013-11-25 approved by: DTS revision: 2.2 2